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{"_buckets": {"deposit": "64be6ec1-bb5f-4ca7-990a-69d6116df9a1"}, "_deposit": {"created_by": 3, "id": "11600", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "11600"}, "status": "published"}, "_oai": {"id": "oai:sucra.repo.nii.ac.jp:00011600", "sets": ["427"]}, "author_link": ["18278"], "item_118_biblio_info_8": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicVolumeNumber": "平成10-11年度", "bibliographic_titles": [{"bibliographic_title": "科学研究費補助金基盤研究(C)(2)研究成果報告書"}]}]}, "item_118_description_18": {"attribute_name": "識別番号 その他", "attribute_value_mlt": [{"subitem_description": "KAKEN: 10650035", "subitem_description_type": "Other"}]}, "item_118_description_19": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "By observing the intensity change of band-to-band photoluminescence(PL) due to the superposition of a below-gap excitation(BGE) light on a onventional above-gap excitation(AGE) light, a quantitative study on nonradiative recombination(NRR) centers in bulk and multiple quantum well(MQW) miconductors became possible. Lowering the AGE density down to the regime of single-photon-counting detection improved the sensitivity of finding NRR centers. The energy distribution of the NRR centers inside forbidden gap and their spatial distribution in MQW structures became clear by tuning the energy of both AGE and BGE systematically.\nVarious levels were detected in GaAs/AIGaAs MQW structures grown by MOCVD technique, reflecting their growth temperature, composition and doping concentrations. We analyzed the PL intensity increase or decrease due to the BGE based on a one-level model or a two-levels model, respectively, after SRH statistics. Trap parameters were determined self-consistently by considering the AGE and BGE density dependence of the PL intensity change. Contrary to uniformly doped samples, a distinct absence of NRR centers in modulation-doped well layers became clear for the first time. In InGaN/GaN MQW structures, NRR centers were found in GaN layers and their energy distribution was consistent with the previous band diagram including the yellow luminescence band.\nSince the method is non-contacting and non-destractive, it can be utilized for characterizing various below-gap states in wafers and device structures, through which optimization of each processing step and the structure of light emitting devices becomes possible.", "subitem_description_type": "Abstract"}]}, "item_118_description_21": {"attribute_name": "注記", "attribute_value_mlt": [{"subitem_description": "別刷論文削除", "subitem_description_type": "Other"}]}, "item_118_description_29": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"subitem_description": "text", "subitem_description_type": "Other"}]}, "item_118_description_30": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_118_relation_7": {"attribute_name": "著者 外部リンク", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "http://s-read.saitama-u.ac.jp/researchers/pages/researcher/TuMfsmBx"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://s-read.saitama-u.ac.jp/researchers/pages/researcher/TuMfsmBx", "subitem_relation_type_select": "URI"}}]}, "item_118_text_3": {"attribute_name": "著者 ローマ字", "attribute_value_mlt": [{"subitem_text_value": "Kamata, Norihiko"}]}, "item_118_text_32": {"attribute_name": "アイテムID", "attribute_value_mlt": [{"subitem_text_value": "KK000214"}]}, "item_118_text_33": {"attribute_name": "タイトル カナ", "attribute_value_mlt": [{"subitem_text_value": "ハッコウ デバイスヨウ ハンドウタイ ノ ヒハッコウ サイケツゴウ ジュンイ スペクトロスコピー"}]}, "item_118_text_35": {"attribute_name": "公開日(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "Apr 20, 2009 09:00:00"}]}, "item_118_text_36": {"attribute_name": "最終更新日(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "Feb 14, 2010 14:59:29"}]}, "item_118_text_37": {"attribute_name": "更新履歴(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "Feb 14, 2010 抄録 を変更"}, {"subitem_text_value": "Sep 8, 2009 著者 を変更"}, {"subitem_text_value": "Apr 21, 2009 "}, {"subitem_text_value": "Apr 21, 2009 インデックス を変更"}, {"subitem_text_value": "Apr 21, 2009 抄録 を変更"}, {"subitem_text_value": "Apr 21, 2009 インデックス, 抄録 を変更"}, {"subitem_text_value": "Apr 21, 2009 コメント, フリーキーワード, 抄録 を変更"}]}, "item_118_text_38": {"attribute_name": "登録者(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "sucra_jim4"}]}, "item_118_text_39": {"attribute_name": "閲覧数(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "958"}]}, "item_118_text_4": {"attribute_name": "著者 所属", "attribute_value_mlt": [{"subitem_text_value": "埼玉大学大学院理工学研究科"}]}, "item_118_text_40": {"attribute_name": "ダウンロード数(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "1946"}]}, "item_118_text_41": {"attribute_name": "XooNIps_インデックス", "attribute_value_mlt": [{"subitem_text_value": "Public/ジャンル別/研究報告書/埼玉大学/科研報告書|sucra_jim4/埼玉大学|Public/埼玉大学/理工学研究科/物質科学部門|Public/主題別/工学/応用物理学・工学基礎/応用物性・結晶工学|Public/主題別/工学/応用物理学・工学基礎/応用光学・量子光工学|Public/埼玉大学/理工学研究科"}]}, "item_118_text_42": {"attribute_name": "XooNIps_ITEM_KEY", "attribute_value_mlt": [{"subitem_text_value": "3899"}]}, "item_118_text_5": {"attribute_name": "著者 所属(別言語)", "attribute_value_mlt": [{"subitem_text_value": "Graduate School of Science and Engineering, Saitama University"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "鎌田, 憲彦"}, {"creatorName": "カマタ, ノリヒコ", "creatorNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "18278", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-01-23"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "KK000214.pdf", "filesize": [{"value": "513.0 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 513000.0, "url": {"label": "KK000214.pdf", "url": "https://sucra.repo.nii.ac.jp/record/11600/files/KK000214.pdf"}, "version_id": "85ac50d9-a249-49c1-8f6d-3a75e2fec03b"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "research report", "resourceuri": "http://purl.org/coar/resource_type/c_18ws"}]}, "item_title": "発光デバイス用半導体の非発光再結合準位スペクトロスコピー", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "発光デバイス用半導体の非発光再結合準位スペクトロスコピー"}]}, "item_type_id": "118", "owner": "3", "path": ["427"], "permalink_uri": "https://sucra.repo.nii.ac.jp/records/11600", "pubdate": {"attribute_name": "公開日", "attribute_value": "2009-04-20"}, "publish_date": "2009-04-20", "publish_status": "0", "recid": "11600", "relation": {}, "relation_version_is_last": true, "title": ["発光デバイス用半導体の非発光再結合準位スペクトロスコピー"], "weko_shared_id": -1}
発光デバイス用半導体の非発光再結合準位スペクトロスコピー
https://sucra.repo.nii.ac.jp/records/11600
https://sucra.repo.nii.ac.jp/records/1160051184f5d-f49a-429d-964b-84bb64c4b92e
名前 / ファイル | ライセンス | アクション |
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KK000214.pdf (513.0 kB)
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Item type | 研究報告書 / Research Paper(1) | |||||
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公開日 | 2009-04-20 | |||||
タイトル | ||||||
タイトル | 発光デバイス用半導体の非発光再結合準位スペクトロスコピー | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18ws | |||||
資源タイプ | research report | |||||
著者 |
鎌田, 憲彦
× 鎌田, 憲彦 |
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著者 ローマ字 | ||||||
Kamata, Norihiko | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科 | ||||||
著者 所属(別言語) | ||||||
Graduate School of Science and Engineering, Saitama University | ||||||
書誌情報 |
科学研究費補助金基盤研究(C)(2)研究成果報告書 巻 平成10-11年度 |
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識別番号 その他 | ||||||
内容記述タイプ | Other | |||||
内容記述 | KAKEN: 10650035 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | By observing the intensity change of band-to-band photoluminescence(PL) due to the superposition of a below-gap excitation(BGE) light on a onventional above-gap excitation(AGE) light, a quantitative study on nonradiative recombination(NRR) centers in bulk and multiple quantum well(MQW) miconductors became possible. Lowering the AGE density down to the regime of single-photon-counting detection improved the sensitivity of finding NRR centers. The energy distribution of the NRR centers inside forbidden gap and their spatial distribution in MQW structures became clear by tuning the energy of both AGE and BGE systematically. Various levels were detected in GaAs/AIGaAs MQW structures grown by MOCVD technique, reflecting their growth temperature, composition and doping concentrations. We analyzed the PL intensity increase or decrease due to the BGE based on a one-level model or a two-levels model, respectively, after SRH statistics. Trap parameters were determined self-consistently by considering the AGE and BGE density dependence of the PL intensity change. Contrary to uniformly doped samples, a distinct absence of NRR centers in modulation-doped well layers became clear for the first time. In InGaN/GaN MQW structures, NRR centers were found in GaN layers and their energy distribution was consistent with the previous band diagram including the yellow luminescence band. Since the method is non-contacting and non-destractive, it can be utilized for characterizing various below-gap states in wafers and device structures, through which optimization of each processing step and the structure of light emitting devices becomes possible. |
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注記 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 別刷論文削除 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
アイテムID | ||||||
KK000214 |