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Anodization of electrolytically polished Ta surfaces for enhancement of carrier injection into organic field effect transistors
https://sucra.repo.nii.ac.jp/records/13211
https://sucra.repo.nii.ac.jp/records/132119ada2a33-a814-4ede-8457-fda625df2d94
名前 / ファイル | ライセンス | アクション |
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A1002588.pdf (293.9 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-04-11 | |||||
タイトル | ||||||
タイトル | Anodization of electrolytically polished Ta surfaces for enhancement of carrier injection into organic field effect transistors | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
上野, 啓司
× 上野, 啓司 |
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著者 ローマ字 | ||||||
Ueno, Keiji | ||||||
著者 ローマ字 | ||||||
Abe, Shigeomi | ||||||
著者 ローマ字 | ||||||
Onoki, Ryo | ||||||
著者 ローマ字 | ||||||
Saiki, Koichiro | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科物質科学部門 | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, Saitama University | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, Saitama University | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, Saitama University | ||||||
著者 所属(別言語) | ||||||
Department of Complexity Science and Engineering, The University of Tokyo | ||||||
書誌情報 |
JOURNAL OF APPLIED PHYSICS 巻 98, 号 11, p. 114503-1-114503-5, 発行日 2005 |
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年月次 | ||||||
2005-12 | ||||||
出版者名 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1063/1.2138807 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Electrolytically polished surfaces of Ta sheets were anodized in an aqueous KI solution to form Ta_2O_5 films with a relatively high dielectric constant and a high breakdown electric field. Organic field-effect transistors (OFETs) were fabricated on these Ta_2O_5/Ta substrates with a bottom gate configuration. The Ta_2O_5 films anodized at 100 V were about 200 nm thick, and the dielectric strength was as high as 5 MV/cm. A p-type pentacene OFET fabricated on this bottom gate showed the good field-effect mobility of 0.35 cm(2)/V s. By using this high-k gate substrate, it becomes possible to inject a higher amount of charge carriers into organic active layers than on the SiO_2/Si gate conventionally used in most OFETs. | |||||
版 | ||||||
[出版社版] | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-04-11 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1002588 |