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Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica
https://sucra.repo.nii.ac.jp/records/13216
https://sucra.repo.nii.ac.jp/records/132164359d866-2815-4e4a-8e05-95413ce3ab37
名前 / ファイル | ライセンス | アクション |
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A1002594.pdf (1.8 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-04-11 | |||||
タイトル | ||||||
タイトル | Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
上野, 啓司
× 上野, 啓司× 斉木, 幸一朗× Shimada, Toshihiro× 小間, 篤 |
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著者 ローマ字 | ||||||
Ueno, Keiji | ||||||
著者 ローマ字 | ||||||
Saiki, Koichiro | ||||||
著者 ローマ字 | ||||||
Shimada, Toshihiro | ||||||
著者 ローマ字 | ||||||
Koma, Atsushi | ||||||
著者 所属 | ||||||
東京大学大学院理学系研究科(現 : 埼玉大学大学院理工学研究科物質科学部門) | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University) | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo | ||||||
書誌情報 |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 巻 8, 号 1, p. 68-72, 発行日 1990 |
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年月次 | ||||||
1990-1 | ||||||
出版者名 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 07342101 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1116/1.576983 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We have grown ultrathin films of layered transition metal dichalcogenides (MoSez,NbSez) heteroepitaxially on cleaved faces of mica (muscovite). This is the first success in the heteroepitaxial growth between highly heterogeneous layered materials having different crystal structures and lattice constants that differ by as much as 58%. The lattice matching condition is greatly loosened in those cases because the growth proceeds with weak van der Waals forces between the substrate and the grown layer. This opens a new way to fabricate a heterostructure composed of many kinds oflayered materials having various physical and chemical properties. | |||||
版 | ||||||
[出版社版] | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-04-11 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1002594 |