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Van der Waals epitaxial growth and characterization of MoSe_2 thin films on SnS_2
https://sucra.repo.nii.ac.jp/records/13217
https://sucra.repo.nii.ac.jp/records/1321758620ca8-90d5-41cf-8804-38ed00033b41
名前 / ファイル | ライセンス | アクション |
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A1002595.pdf (1.1 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-04-11 | |||||
タイトル | ||||||
タイトル | Van der Waals epitaxial growth and characterization of MoSe_2 thin films on SnS_2 | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
OHUCHI, FS
× OHUCHI, FS× PARKINSON, BA× 上野, 啓司× 小間, 篤 |
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著者 ローマ字 | ||||||
OHUCHI, FS | ||||||
著者 ローマ字 | ||||||
PARKINSON, BA | ||||||
著者 ローマ字 | ||||||
Ueno, Keiji | ||||||
著者 ローマ字 | ||||||
Koma, Atsushi | ||||||
著者 所属 | ||||||
著者 所属 | ||||||
著者 所属 | ||||||
東京大学大学院理学系研究科(現 : 埼玉大学大学院理工学研究科物質科学部門) | ||||||
著者 所属(別言語) | ||||||
Central Research and Development Department, E. L DuPont de Nemours and Company | ||||||
著者 所属(別言語) | ||||||
Central Research and Development Department, E. L DuPont de Nemours and Company | ||||||
著者 所属(別言語) | ||||||
Department ofChemistry, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University) | ||||||
著者 所属(別言語) | ||||||
Department ofChemistry, The University of Tokyo | ||||||
書誌情報 |
JOURNAL OF APPLIED PHYSICS 巻 68, 号 5, p. 2168-2175, 発行日 1990 |
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年月次 | ||||||
1990-9 | ||||||
出版者名 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1063/1.346574 | |||||
版 | ||||||
[出版社版] | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-04-11 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1002595 |