WEKO3
アイテム
{"_buckets": {"deposit": "903081e0-03c0-4b85-ab34-5c31bb642700"}, "_deposit": {"created_by": 3, "id": "13464", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "13464"}, "status": "published"}, "_oai": {"id": "oai:sucra.repo.nii.ac.jp:00013464", "sets": ["426"]}, "author_link": ["22346", "22347", "18278", "22348"], "item_119_biblio_info_8": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "2", "bibliographicPageEnd": "82", "bibliographicPageStart": "79", "bibliographicVolumeNumber": "32", "bibliographic_titles": [{"bibliographic_title": "Journal of light and visual environment"}]}]}, "item_119_date_31": {"attribute_name": "作成日", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2009-09-02", "subitem_date_issued_type": "Created"}]}, "item_119_description_19": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We demonstrated AlGaN multi-quantum well (MQW) deep ultraviolet (UV) light-emitting diodes (LEDs) with wavelength in the range of 227-261 nm fabricated on high-quality AlN buffers on sapphire substrates. We achieved crack-free, thick AlN buffer on sapphire with low threading dislocation density (TDD) and atomically flat surface by introducing an ammonia (NH_3) pulse-flow multi-layer (ML) growth method through metal-organic chemical vapor deposition (MOCVD). The edge- and screw-type dislocation densities of AlGaN layer on AlN buffer were reduced to 7.5×10^8 and 3.8×10^7 cm^\u003c-2\u003e, respectively, by using a ML-AlN buffer. We achieved single-peaked high-brightness operations of AlGaN deep-UV LEDs by fabricating them on the ML-AlN buffers on sapphire substrates. The maximum output power and external quantum efficiency (EQE) of the 261 nm and 227.5 nm LEDs were 1.65 mW and 0.23% under room-temperature (RT) CW operation, and 0.15 mW and 0.2%, under RT pulsed operation, respectively.", "subitem_description_type": "Abstract"}]}, "item_119_description_21": {"attribute_name": "注記", "attribute_value_mlt": [{"subitem_description": "rights: 社団法人照明学会\nrights: 本文データは学協会の許諾に基づきCiNiiから複製したものである\nrelation: IsVersionOf: http://ci.nii.ac.jp/naid/110006663889/", "subitem_description_type": "Other"}]}, "item_119_description_29": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"subitem_description": "text", "subitem_description_type": "Other"}]}, "item_119_description_30": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_119_publisher_11": {"attribute_name": "出版者名", "attribute_value_mlt": [{"subitem_publisher": "社団法人照明学会"}]}, "item_119_relation_7": {"attribute_name": "著者 外部リンク", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "\u0026EMPTY\u0026"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "\u0026EMPTY\u0026", "subitem_relation_type_select": "URI"}}, {"subitem_relation_name": [{"subitem_relation_name_text": "\u0026EMPTY\u0026"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "\u0026EMPTY\u0026", "subitem_relation_type_select": "URI"}}, {"subitem_relation_name": [{"subitem_relation_name_text": "\u0026EMPTY\u0026"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "\u0026EMPTY\u0026", "subitem_relation_type_select": "URI"}}, {"subitem_relation_name": [{"subitem_relation_name_text": "http://s-read.saitama-u.ac.jp/researchers/pages/researcher/TuMfsmBx"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://s-read.saitama-u.ac.jp/researchers/pages/researcher/TuMfsmBx", "subitem_relation_type_select": "URI"}}]}, "item_119_source_id_14": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "03878805", "subitem_source_identifier_type": "ISSN"}]}, "item_119_text_27": {"attribute_name": "版", "attribute_value_mlt": [{"subitem_text_value": "[出版社版]"}]}, "item_119_text_3": {"attribute_name": "著者 ローマ字", "attribute_value_mlt": [{"subitem_text_value": "HIRAYAMA, Hideki"}, {"subitem_text_value": "YATABE, Tohru"}, {"subitem_text_value": "NOGUCHI, Norimichi"}, {"subitem_text_value": "KAMATA, Norihiko"}]}, "item_119_text_32": {"attribute_name": "アイテムID", "attribute_value_mlt": [{"subitem_text_value": "A1003142"}]}, "item_119_text_35": {"attribute_name": "公開日(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "Sep 2, 2009 14:43:38"}]}, "item_119_text_36": {"attribute_name": "最終更新日(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "Mar 29, 2010 12:13:51"}]}, "item_119_text_37": {"attribute_name": "更新履歴(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "Mar 29, 2010 更新日, 著者 を変更"}, {"subitem_text_value": "Sep 2, 2009 インデックス, 著者 を変更"}, {"subitem_text_value": "Sep 2, 2009 概要, インデックス, 版, 著者 を変更"}]}, "item_119_text_38": {"attribute_name": "登録者(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "sucra_jim4"}]}, "item_119_text_39": {"attribute_name": "閲覧数(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "1284"}]}, "item_119_text_4": {"attribute_name": "著者 所属", "attribute_value_mlt": [{"subitem_text_value": "理研"}, {"subitem_text_value": "埼玉大学"}, {"subitem_text_value": "埼玉大学"}, {"subitem_text_value": "埼玉大学"}]}, "item_119_text_40": {"attribute_name": "ダウンロード数(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "553"}]}, "item_119_text_41": {"attribute_name": "XooNIps_インデックス", "attribute_value_mlt": [{"subitem_text_value": "sucra_jim4|Public/埼玉大学/理工学研究科|Public/埼玉大学/理工学研究科/物質科学部門|Public/ジャンル別/学術雑誌論文(国内)/照明学会|Public/主題別/工学/電気電子工学/電力工学・電力変換・電気機器"}]}, "item_119_text_42": {"attribute_name": "XooNIps_ITEM_KEY", "attribute_value_mlt": [{"subitem_text_value": "5113"}]}, "item_119_text_5": {"attribute_name": "著者 所属(別言語)", "attribute_value_mlt": [{"subitem_text_value": "RIKEN:JST CREST"}, {"subitem_text_value": "Saitama University"}, {"subitem_text_value": "Saitama University"}, {"subitem_text_value": "Saitama University:JST CREST"}]}, "item_119_text_9": {"attribute_name": "年月次", "attribute_value_mlt": [{"subitem_text_value": "2008-5"}]}, "item_119_version_type_28": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "平山, 秀樹"}, {"creatorName": "ヒラヤマ, ヒデキ", "creatorNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "22346", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "谷田部, 透"}, {"creatorName": "ヤタベ, トオル", "creatorNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "22347", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "野口, 憲道"}, {"creatorName": "ノグチ, ノリミチ", "creatorNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "22348", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "鎌田, 憲彦"}, {"creatorName": "カマタ, ノリヒコ", "creatorNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "18278", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-01-24"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "A1003142.pdf", "filesize": [{"value": "718.6 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 718600.0, "url": {"label": "A1003142.pdf", "url": "https://sucra.repo.nii.ac.jp/record/13464/files/A1003142.pdf"}, "version_id": "ffc24c72-1d72-4fbb-97ad-6af58af7603c"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire"}]}, "item_type_id": "119", "owner": "3", "path": ["426"], "permalink_uri": "https://sucra.repo.nii.ac.jp/records/13464", "pubdate": {"attribute_name": "公開日", "attribute_value": "2009-09-02"}, "publish_date": "2009-09-02", "publish_status": "0", "recid": "13464", "relation": {}, "relation_version_is_last": true, "title": ["227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire"], "weko_shared_id": -1}
227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire
https://sucra.repo.nii.ac.jp/records/13464
https://sucra.repo.nii.ac.jp/records/134644a840926-1d9f-4184-a252-e119c05f420e
名前 / ファイル | ライセンス | アクション |
---|---|---|
A1003142.pdf (718.6 kB)
|
|
Item type | 学術雑誌論文 / Journal Article(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2009-09-02 | |||||
タイトル | ||||||
タイトル | 227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
平山, 秀樹
× 平山, 秀樹× 谷田部, 透× 野口, 憲道× 鎌田, 憲彦 |
|||||
著者 ローマ字 | ||||||
HIRAYAMA, Hideki | ||||||
著者 ローマ字 | ||||||
YATABE, Tohru | ||||||
著者 ローマ字 | ||||||
NOGUCHI, Norimichi | ||||||
著者 ローマ字 | ||||||
KAMATA, Norihiko | ||||||
著者 所属 | ||||||
理研 | ||||||
著者 所属 | ||||||
埼玉大学 | ||||||
著者 所属 | ||||||
埼玉大学 | ||||||
著者 所属 | ||||||
埼玉大学 | ||||||
著者 所属(別言語) | ||||||
RIKEN:JST CREST | ||||||
著者 所属(別言語) | ||||||
Saitama University | ||||||
著者 所属(別言語) | ||||||
Saitama University | ||||||
著者 所属(別言語) | ||||||
Saitama University:JST CREST | ||||||
書誌情報 |
Journal of light and visual environment 巻 32, 号 2, p. 79-82, 発行日 2008 |
|||||
年月次 | ||||||
2008-5 | ||||||
出版者名 | ||||||
出版者 | 社団法人照明学会 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 03878805 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We demonstrated AlGaN multi-quantum well (MQW) deep ultraviolet (UV) light-emitting diodes (LEDs) with wavelength in the range of 227-261 nm fabricated on high-quality AlN buffers on sapphire substrates. We achieved crack-free, thick AlN buffer on sapphire with low threading dislocation density (TDD) and atomically flat surface by introducing an ammonia (NH_3) pulse-flow multi-layer (ML) growth method through metal-organic chemical vapor deposition (MOCVD). The edge- and screw-type dislocation densities of AlGaN layer on AlN buffer were reduced to 7.5×10^8 and 3.8×10^7 cm^<-2>, respectively, by using a ML-AlN buffer. We achieved single-peaked high-brightness operations of AlGaN deep-UV LEDs by fabricating them on the ML-AlN buffers on sapphire substrates. The maximum output power and external quantum efficiency (EQE) of the 261 nm and 227.5 nm LEDs were 1.65 mW and 0.23% under room-temperature (RT) CW operation, and 0.15 mW and 0.2%, under RT pulsed operation, respectively. | |||||
注記 | ||||||
内容記述タイプ | Other | |||||
内容記述 | rights: 社団法人照明学会 rights: 本文データは学協会の許諾に基づきCiNiiから複製したものである relation: IsVersionOf: http://ci.nii.ac.jp/naid/110006663889/ |
|||||
版 | ||||||
[出版社版] | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2009-09-02 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1003142 |