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分光エリプソメトリによるSiC半導体の酸化界面評価と酸化メカニズム解明<研究成果報告>
https://doi.org/10.24561/00016435
https://doi.org/10.24561/000164353231c5ab-ebaf-4162-912d-60687c902fa4
名前 / ファイル | ライセンス | アクション |
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KY-AN00095842-43-04.pdf (578.3 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2014-02-24 | |||||
タイトル | ||||||
タイトル | 分光エリプソメトリによるSiC半導体の酸化界面評価と酸化メカニズム解明<研究成果報告> | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Silicon carbide | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | oxidation | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | MOSFET | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Spectroscopic ellipsometry | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Oxidizing interface | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ID登録 | ||||||
ID登録 | 10.24561/00016435 | |||||
ID登録タイプ | JaLC | |||||
タイトル(別言語) | ||||||
その他のタイトル | Characterization of oxidizing interface and elucidation of oxidation mechanism of SiC semiconductor using spectroscopic ellipsometry | |||||
著者 |
土方, 泰斗
× 土方, 泰斗× 矢口, 裕之× 吉田, 貞史 |
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著者 ローマ字 | ||||||
HIJIKATA, Yasuto | ||||||
著者 ローマ字 | ||||||
YAGUCHI, Hiroyuki | ||||||
著者 ローマ字 | ||||||
YOSHIDA, Sadafumi | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科数理電子情報部門 | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科数理電子情報部門 | ||||||
著者 所属 | ||||||
産業技術総合研究所第2事業部先進パワーエレクトロニクス研究センター | ||||||
著者 所属(別言語) | ||||||
Division of Mathematics Electronics and Informatics, Graduate School of Science and Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Division of Mathematics Electronics and Informatics, Graduate School of Science and Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Advanced power electronics research center, National Institute of Advanced Industrial Science and Technology | ||||||
書誌情報 |
埼玉大学工学部紀要 第一部 論文集 巻 43, p. 17-21, 発行日 2009 |
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年月次 | ||||||
2009 | ||||||
出版者名 | ||||||
出版者 | 埼玉大学工学部 | |||||
出版者名(別言語) | ||||||
出版者 | Faculty of Engineering, Saitama University | |||||
概要 | ||||||
内容記述タイプ | Other | |||||
内容記述 | We tried to elucidate the oxidizing interface structure of SiC semiconductor and its oxidation mechanism. First of all, we investigated the analysis method for deriving the thickness of interface layer and verified the validity of the method by analyzing the multi-angle measurement data. As a result of analysis for SiC-oxide interfaces using the analysis method, it is found that the photon energy dispersion of optical constants of the interface layer is similar to that for SiC, the real part of dielectric function is larger than that of SiC, and the imaginary part agrees with that of SiC. In addition, we examined the thickness dependence of optical constants of interface layer and found that the standing point in energy dispersion of the imaginary part of dielectric function shifted to the lower energy-side at 40 nm of oxide thickness. In addition to the observation of SiC-oxide interface, real-time measurements of oxide growth-rates of SiC at various oxidation temperatures were conducted using an in-situ spectroscopic ellipsometer. We tried to apply ‘Si and C emission model’, which is proposed as the SiC oxidation model by us, to the experimental growth-rate data. As a result, the Si and C emission model well reproduced the growth-rate at the entire oxide thickness region at all of the oxidation temperatures measured for both of (0001)Si-face and (000-1)C-face. Based on the knowledge on oxidizing interface layer and oxidation mechanism obtained from spectroscopic ellipsometry studies, we discuss the structure of interface layer and the formation mechanism of interface states. | |||||
版 | ||||||
[出版社版] | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2014-02-24 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
KY-AN00095842-43-04 |