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新しいCMP用固定砥粒形ポリシングパッドの開発研究
https://doi.org/10.24561/00016624
https://doi.org/10.24561/000166241fbea327-1c53-4350-859f-c8b7d884c9bc
名前 / ファイル | ライセンス | アクション |
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KY-AA11808968-02-24.pdf (585.1 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2009-06-02 | |||||
タイトル | ||||||
タイトル | 新しいCMP用固定砥粒形ポリシングパッドの開発研究 | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ID登録 | ||||||
ID登録 | 10.24561/00016624 | |||||
ID登録タイプ | JaLC | |||||
タイトル(別言語) | ||||||
その他のタイトル | Development of a New Fixed Abrasive-type Polishing Pad | |||||
著者 |
富永, 茂
× 富永, 茂× 榊原, 晋× 土肥, 俊郎 |
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著者 ローマ字 | ||||||
Shigeru Tominaga | ||||||
著者 ローマ字 | ||||||
Susumu Sakakibara | ||||||
著者 ローマ字 | ||||||
Toshiroh Karari Doy | ||||||
著者 所属 | ||||||
株式会社ロキテク | ||||||
著者 所属 | ||||||
株式会社ロキテク | ||||||
著者 所属 | ||||||
埼玉大学教育学部 | ||||||
著者 所属(別言語) | ||||||
ROKITECHNO CO.,LTD | ||||||
著者 所属(別言語) | ||||||
ROKITECHNO CO.,LTD | ||||||
著者 所属(別言語) | ||||||
Faculty of Education, Saitama University | ||||||
書誌情報 |
埼玉大学地域共同研究センター紀要 en : Report of Cooperative Research Center, Saitama University 巻 2, p. 90-95, 発行日 2002 |
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年月次 | ||||||
2001 | ||||||
出版者名 | ||||||
出版者 | 埼玉大学地域共同研究センター | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 13474758 | |||||
概要 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Anew fixed abrasive-type Polishing Pad for CMP of semiconductor device oxide layer like as lLD and STI is examined. The new type polishing pad is composed two thin layers which are a Ceria fixed abrasive and polymer layer, arranged in a line alternatively, and kept in a vertical position to the pad surface. The examined polishing pads are made from three kinds of polymer, Acrylic esters, Polyurethane, Polystyrene selected as a material for a binder of the fixed abrasive layer and the polymer layer. The pad combined Acrylic esters for binder of fixed abrasive layer and Polyurethane for polymer layer shows the highest material removal rate(M.R.R). Applying to diluted Ceria slurry for oxide layer CMP, the examined pad shows much higher M.M.R. than ordinary Foamed Polyurethane Pad. The new fixed abrasive-type polishing pad is possible to reduce amount of Ceria slurry to 1/3〜1/5. We discuss the polishing mechanism applying the new fixed abrasive-type polishing pad at the viewpoint of the relationship between M.M.R. and concentration of extricated Ceria abrasive upon a pad, then conclude that M. M. R. does not have an effect on fixed abrasive on pad, but on extricated abrasive from the pad. |
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資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2009-06-18 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
KY-AA11808968-02-24 |