WEKO3
アイテム
{"_buckets": {"deposit": "833fca17-b832-466b-a93b-85c5a92e1f52"}, "_deposit": {"created_by": 3, "id": "12943", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "12943"}, "status": "published"}, "_oai": {"id": "oai:sucra.repo.nii.ac.jp:00012943", "sets": ["426"]}, "author_link": ["16572", "20432", "20433", "20431"], "item_119_biblio_info_8": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2006", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "3", "bibliographicPageEnd": "159", "bibliographicPageStart": "153", "bibliographicVolumeNumber": "33", "bibliographic_titles": [{"bibliographic_title": "EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS"}]}]}, "item_119_date_31": {"attribute_name": "作成日", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2007-10-16", "subitem_date_issued_type": "Created"}]}, "item_119_description_19": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "The plasma parameters for the fast deposition of highly crystallized microcrystalline silicon (mu c-Si) films with low defect density are presented using a high-density and low-temperature SiH4-H-2 mixture microwave plasma. A very high deposition rate of similar to 65 angstrom/s was achieved for a SiH4 concentration of 67% diluted in H-2 with a high Raman crystallinity I-c/I-a \u003e 2.5 and a low defect density of 1-2 x 10(16) cm(-3) by adjusting the plasma conditions. Contrary to the case of a conventional rf plasma, the defect density of the mu c-Si films strongly depends on substrate temperature, T-s, and increases with increasing T-s even if T-s is below 300 degrees C. This indicates that the real temperature at the growing surface is higher than the monitored value. A sufficient supply of deposition precursors such as SiH3 at the growing surface under an appropriate ion bombardment is effective for the fast deposition of highly crystallized mu c-Si films as well as for the suppression of the amorphous incubation and transition interface layers at the initial growth stage.", "subitem_description_type": "Abstract"}]}, "item_119_description_29": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"subitem_description": "text", "subitem_description_type": "Other"}]}, "item_119_description_30": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_119_publisher_11": {"attribute_name": "出版者名", "attribute_value_mlt": [{"subitem_publisher": "EDP Sciences"}]}, "item_119_relation_16": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "info:doi/10.1051/epjap:2006018", "subitem_relation_type_select": "DOI"}}]}, "item_119_relation_7": {"attribute_name": "著者 外部リンク", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "\u0026EMPTY\u0026"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "\u0026EMPTY\u0026", "subitem_relation_type_select": "URI"}}, {"subitem_relation_name": [{"subitem_relation_name_text": "\u0026EMPTY\u0026"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "\u0026EMPTY\u0026", "subitem_relation_type_select": "URI"}}, {"subitem_relation_name": [{"subitem_relation_name_text": "\u0026EMPTY\u0026"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "\u0026EMPTY\u0026", "subitem_relation_type_select": "URI"}}, {"subitem_relation_name": [{"subitem_relation_name_text": "http://s-read.saitama-u.ac.jp/researchers/pages/researcher/sVUZlxoe"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://s-read.saitama-u.ac.jp/researchers/pages/researcher/sVUZlxoe", "subitem_relation_type_select": "URI"}}]}, "item_119_source_id_14": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "12860042", "subitem_source_identifier_type": "ISSN"}]}, "item_119_text_3": {"attribute_name": "著者 ローマ字", "attribute_value_mlt": [{"subitem_text_value": "Jia, Haijun"}, {"subitem_text_value": "Saha, K, Jhantu"}, {"subitem_text_value": "Ohse, Naoyuki"}, {"subitem_text_value": "Shirai, Hajime"}]}, "item_119_text_32": {"attribute_name": "アイテムID", "attribute_value_mlt": [{"subitem_text_value": "A1002276"}]}, "item_119_text_35": {"attribute_name": "公開日(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "Oct 17, 2007 09:00:00"}]}, "item_119_text_36": {"attribute_name": "最終更新日(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "Sep 7, 2009 14:20:12"}]}, "item_119_text_37": {"attribute_name": "更新履歴(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "Sep 7, 2009 フリーキーワード, 著者 を変更"}, {"subitem_text_value": "Mar 17, 2009 フリーキーワード, キーワード を変更"}, {"subitem_text_value": "Dec 18, 2008 フリーキーワード, インデックス, キーワード を変更"}, {"subitem_text_value": "Aug 6, 2008 フリーキーワード, キーワード を変更"}, {"subitem_text_value": "Feb 27, 2008 フリーキーワード, インデックス, キーワード を変更"}, {"subitem_text_value": "Jan 31, 2008 フリーキーワード, インデックス, キーワード を変更"}, {"subitem_text_value": "Oct 21, 2007 フリーキーワード, インデックス, キーワード を変更"}, {"subitem_text_value": "Oct 17, 2007 フリーキーワード, キーワード を変更"}, {"subitem_text_value": "Oct 17, 2007 ID, フリーキーワード, インデックス, キーワード を変更"}]}, "item_119_text_38": {"attribute_name": "登録者(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "sucra_jim4"}]}, "item_119_text_39": {"attribute_name": "閲覧数(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "1579"}]}, "item_119_text_4": {"attribute_name": "著者 所属", "attribute_value_mlt": [{"subitem_text_value": "埼玉大学大学院理工学研究科物質科学部門物質機能領域"}, {"subitem_text_value": "埼玉大学大学院理工学研究科物質科学部門物質機能領域"}, {"subitem_text_value": "埼玉大学大学院理工学研究科物質科学部門物質機能領域"}, {"subitem_text_value": "埼玉大学大学院理工学研究科物質科学部門物質機能領域"}]}, "item_119_text_40": {"attribute_name": "ダウンロード数(XooNIps)", "attribute_value_mlt": [{"subitem_text_value": "718"}]}, "item_119_text_41": {"attribute_name": "XooNIps_インデックス", "attribute_value_mlt": [{"subitem_text_value": "sucra_jim4|Public/埼玉大学/理工学研究科|Public/埼玉大学/理工学研究科/物質科学部門|Public/ジャンル別/学術雑誌論文(海外)|Public/主題別/工学/応用物理学・工学基礎/薄膜・表面界面物性"}]}, "item_119_text_42": {"attribute_name": "XooNIps_ITEM_KEY", "attribute_value_mlt": [{"subitem_text_value": "905"}]}, "item_119_text_5": {"attribute_name": "著者 所属(別言語)", "attribute_value_mlt": [{"subitem_text_value": "Graduate School of Science and Engineering, Saitama University"}, {"subitem_text_value": "Graduate School of Science and Engineering, Saitama University"}, {"subitem_text_value": "Graduate School of Science and Engineering, Saitama University"}, {"subitem_text_value": "Graduate School of Science and Engineering, Saitama University"}]}, "item_119_text_9": {"attribute_name": "年月次", "attribute_value_mlt": [{"subitem_text_value": "2006-3"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Jia, Haijun"}], "nameIdentifiers": [{"nameIdentifier": "20431", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Saha, K, Jhantu"}], "nameIdentifiers": [{"nameIdentifier": "20432", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohse, Naoyuki"}, {"creatorName": "オオセ, ナオユキ", "creatorNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "20433", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "白井, 肇"}, {"creatorName": "シライ, ハジメ", "creatorNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "16572", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "sVUZlxoe", "nameIdentifierScheme": "研究者総覧", "nameIdentifierURI": "http://s-read.saitama-u.ac.jp/researchers/pages/researcher/sVUZlxoe"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-01-24"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "A1002276.pdf", "filesize": [{"value": "196.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 196200.0, "url": {"label": "A1002276.pdf", "url": "https://sucra.repo.nii.ac.jp/record/12943/files/A1002276.pdf"}, "version_id": "76342685-13a2-48a5-9006-e03eab04a7f9"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "CHEMICAL-VAPOR-DEPOSITION", "subitem_subject_scheme": "Other"}, {"subitem_subject": "GLOW-DISCHARGE PLASMA", "subitem_subject_scheme": "Other"}, {"subitem_subject": "SPECTROSCOPIC ELLIPSOMETRY", "subitem_subject_scheme": "Other"}, {"subitem_subject": "SOLAR-CELLS", "subitem_subject_scheme": "Other"}, {"subitem_subject": "THIN-FILMS", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "High-density microwave plasma of SiH4/H-2 for high rate growth of highly crystallized microcrystalline silicon films", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "High-density microwave plasma of SiH4/H-2 for high rate growth of highly crystallized microcrystalline silicon films"}]}, "item_type_id": "119", "owner": "3", "path": ["426"], "permalink_uri": "https://sucra.repo.nii.ac.jp/records/12943", "pubdate": {"attribute_name": "公開日", "attribute_value": "2007-10-17"}, "publish_date": "2007-10-17", "publish_status": "0", "recid": "12943", "relation": {}, "relation_version_is_last": true, "title": ["High-density microwave plasma of SiH4/H-2 for high rate growth of highly crystallized microcrystalline silicon films"], "weko_shared_id": 3}
High-density microwave plasma of SiH4/H-2 for high rate growth of highly crystallized microcrystalline silicon films
https://sucra.repo.nii.ac.jp/records/12943
https://sucra.repo.nii.ac.jp/records/12943dd1b4e67-d74b-46d2-97c7-a6d84618568d
名前 / ファイル | ライセンス | アクション |
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A1002276.pdf (196.2 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2007-10-17 | |||||
タイトル | ||||||
タイトル | High-density microwave plasma of SiH4/H-2 for high rate growth of highly crystallized microcrystalline silicon films | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | CHEMICAL-VAPOR-DEPOSITION | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | GLOW-DISCHARGE PLASMA | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | SPECTROSCOPIC ELLIPSOMETRY | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | SOLAR-CELLS | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | THIN-FILMS | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Jia, Haijun
× Jia, Haijun× Saha, K, Jhantu× Ohse, Naoyuki× 白井, 肇 |
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著者 ローマ字 | ||||||
Jia, Haijun | ||||||
著者 ローマ字 | ||||||
Saha, K, Jhantu | ||||||
著者 ローマ字 | ||||||
Ohse, Naoyuki | ||||||
著者 ローマ字 | ||||||
Shirai, Hajime | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科物質科学部門物質機能領域 | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科物質科学部門物質機能領域 | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科物質科学部門物質機能領域 | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科物質科学部門物質機能領域 | ||||||
著者 所属(別言語) | ||||||
Graduate School of Science and Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Graduate School of Science and Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Graduate School of Science and Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Graduate School of Science and Engineering, Saitama University | ||||||
書誌情報 |
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 巻 33, 号 3, p. 153-159, 発行日 2006 |
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年月次 | ||||||
2006-3 | ||||||
出版者名 | ||||||
出版者 | EDP Sciences | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 12860042 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1051/epjap:2006018 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The plasma parameters for the fast deposition of highly crystallized microcrystalline silicon (mu c-Si) films with low defect density are presented using a high-density and low-temperature SiH4-H-2 mixture microwave plasma. A very high deposition rate of similar to 65 angstrom/s was achieved for a SiH4 concentration of 67% diluted in H-2 with a high Raman crystallinity I-c/I-a > 2.5 and a low defect density of 1-2 x 10(16) cm(-3) by adjusting the plasma conditions. Contrary to the case of a conventional rf plasma, the defect density of the mu c-Si films strongly depends on substrate temperature, T-s, and increases with increasing T-s even if T-s is below 300 degrees C. This indicates that the real temperature at the growing surface is higher than the monitored value. A sufficient supply of deposition precursors such as SiH3 at the growing surface under an appropriate ion bombardment is effective for the fast deposition of highly crystallized mu c-Si films as well as for the suppression of the amorphous incubation and transition interface layers at the initial growth stage. | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2007-10-16 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1002276 |