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Bi-MOSFET Amplifier for Integration with Multimicroelectrode Array for Extracellular Neuronal Recording (Special Section on High-Performance MOS Analog Circuits)
https://sucra.repo.nii.ac.jp/records/13066
https://sucra.repo.nii.ac.jp/records/130663d22cad9-f487-49d3-88b3-a2ca67c4adaa
名前 / ファイル | ライセンス | アクション |
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A1003133.pdf (620.1 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-01-30 | |||||
タイトル | ||||||
タイトル | Bi-MOSFET Amplifier for Integration with Multimicroelectrode Array for Extracellular Neuronal Recording (Special Section on High-Performance MOS Analog Circuits) | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | MOSFET | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 1/f noise | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | microelectrode | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | extracellular recording | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | low noise amplifier | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
髙橋, 幸郎
× 髙橋, 幸郎 |
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著者 ローマ字 | ||||||
Takahashi, Kohro | ||||||
著者 ローマ字 | ||||||
Takeuchi, Satoshi | ||||||
著者 所属 | ||||||
埼玉大学工学部 | ||||||
著者 所属 | ||||||
埼玉大学工学部 | ||||||
著者 所属(別言語) | ||||||
Faculty of Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Faculty of Engineering, Saitama University | ||||||
書誌情報 |
IEICE transactions on fundamentals of electronics, communications and computer sciences 巻 E77-A, 号 2, p. 388-393, 発行日 1994 |
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年月次 | ||||||
1994-2 | ||||||
出版者名 | ||||||
出版者 | 社団法人電子情報通信学会 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 09168508 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | A high-gain, low-noise amplifier for microelectrode probe, which integrated multimicroelectrode array for extracellular recording of neural activities and solid state circuits for the amplification of induced signals from the electrodes onto one substrate, was fabricated. In the amplifier, low-noise MOSFETs are used in the first stage, an interstage high-pass filter is incorporated to avoid saturation of the amplifier due to the polarization voltage of the electrode. In the second stage, an operational amplifier incorporating Bi-MOSFETs for the realization of high input impedance and large gain-bandwidth product is used. The gain of the fabricated amplifier is 56 dB for the frequency range between 2 Hz to 10 kHz, the noise voltage is 20 μV_<pp> these satisfied design specifications. | |||||
注記 | ||||||
内容記述タイプ | Other | |||||
内容記述 | copyright(c)1994 IEICE許諾番号:08RB0010 http://search.ieice.org/index.html |
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版 | ||||||
[出版社版] | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-01-30 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1003133 |