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Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs (111) surfaces
https://sucra.repo.nii.ac.jp/records/13215
https://sucra.repo.nii.ac.jp/records/1321514fbc41f-2ed6-4a96-b2cd-427bbc5120a8
名前 / ファイル | ライセンス | アクション |
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A1002593.pdf (2.0 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-04-11 | |||||
タイトル | ||||||
タイトル | Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs (111) surfaces | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
上野, 啓司
× 上野, 啓司× Shimada, Toshihiro× 斉木, 幸一朗× 小間, 篤 |
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著者 ローマ字 | ||||||
Ueno, Keiji | ||||||
著者 ローマ字 | ||||||
Shimada, Toshihiro | ||||||
著者 ローマ字 | ||||||
Saiki, Koichiro | ||||||
著者 ローマ字 | ||||||
Koma, Atsushi | ||||||
著者 所属 | ||||||
東京大学大学院理学系研究科(現 : 埼玉大学大学院理工学研究科物質科学部門) | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University) | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo | ||||||
書誌情報 |
APPLIED PHYSICS LETTERS 巻 56, 号 4, p. 327-329, 発行日 1990 |
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年月次 | ||||||
1990-1 | ||||||
出版者名 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1063/1.102817 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Layered transition metal dichalcogenides (MoSe_2, NbSe_2) have been heteroepitaxially grown on (NH_4)_2 Sx (x~2) treated GaAs( 111 )Ga, GaAs( TIT)As surfaces in spite of the large difference in their crystal structures. The in situ observation of reflection high-energy electron diffraction has shown that the grown film hasits own lattice constant even from the first layer. The lattice matching condition, which is severely restricting in the usual heteroepitaxial growth case, is greatly relaxed in the present system because only weak van der Waals forces exist between the grown film and the substrate. This results from the fact that sulfur atoms regularly terminate dangling bonds on the GaAs surface after the (NH_4)_2S_x treatment. | |||||
版 | ||||||
[出版社版] | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-04-11 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1002593 |