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Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate
https://sucra.repo.nii.ac.jp/records/13225
https://sucra.repo.nii.ac.jp/records/13225c1a43297-3682-403e-9398-fca06b923b5b
名前 / ファイル | ライセンス | アクション |
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A1002604.pdf (949.8 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-04-15 | |||||
タイトル | ||||||
タイトル | Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | reflection high energy electron diffraction | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | molecular beam epitaxy | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | gallium compounds | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | semiconducting gallium compounds | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
上野, 啓司
× 上野, 啓司× Tokuchi, S× 斉木, 幸一朗× 小間, 篤 |
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著者 ローマ字 | ||||||
Ueno, Keiji | ||||||
著者 ローマ字 | ||||||
Tokuchi, S | ||||||
著者 ローマ字 | ||||||
Saiki, Koichiro | ||||||
著者 ローマ字 | ||||||
Koma, Atsushi | ||||||
著者 所属 | ||||||
東京大学大学院理学系研究科(現 : 埼玉大学大学院理工学研究科物質科学部門) | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, Graduate School of Science, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University) | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, Graduate School of Science, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Complexity Science and Engineering, Graduate School of Frontier Sciences, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, Graduate School of Science, The University of Tokyo | ||||||
書誌情報 |
JOURNAL OF CRYSTAL GROWTH 巻 237, 号 2, p. 1610-1614, 発行日 2002 |
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年月次 | ||||||
2002-4 | ||||||
出版者名 | ||||||
出版者 | Elsevier Science B.V. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00220248 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1016/S0022-0248(01)02353-3 | |||||
関連サイト | ||||||
内容記述タイプ | Other | |||||
内容記述 | http://www.sciencedirect.com/science/journal/00220248 | http://www.sciencedirect.com/science/journal/00220248 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We have fabricated a vacancy-ordered Ga2Se3 epitaxial film by molecular beam epitaxy on a vicinal Si(001) surface tilted toward the [110] direction by 4degrees. It was found by reflection high-energy electron diffraction observations that Ga2Se3 films grown around 470degreesC with Se/Ga flux ratios higher than 100 show excellent ordering of Ga vacancies, The vacancy ordering was not observed when the substrate temperature was higher than 490degreesC. In addition, polycrystalline film growth was dominant when the substrate temperature was lower than 450degreesC, and no vacancy ordering was observed when the Se/Ga ratio was 10. Only a poor crystallinity Ga2Se3 film was obtained on a nominal Si(001) substrate, which suggests that the single-domain 2 x I reconstruction on the vicinal Si(001) surface is essential to the growth of the vacancy-ordered Ga2Se3 film. (C) 2002 Elsevier Science B.V. All rights reserved. | |||||
版 | ||||||
[著者版] | ||||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-04-15 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1002604 |