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A novel method to fabricate a molecular quantum structure: Selective growth of C-60 on layered material heterostructures
https://sucra.repo.nii.ac.jp/records/13238
https://sucra.repo.nii.ac.jp/records/13238c866adc5-6f25-43d9-bd41-1dee23e6a065
名前 / ファイル | ライセンス | アクション |
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A1002622.pdf (602.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-04-22 | |||||
タイトル | ||||||
タイトル | A novel method to fabricate a molecular quantum structure: Selective growth of C-60 on layered material heterostructures | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | nanostructure | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | molecular crystal | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | selective growth | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | C60 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | MoS2 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | GaSe | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | InSe | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | van der Waals epitaxy | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
上野, 啓司
× 上野, 啓司× Sasaki, Kentaro× 斉木, 幸一朗× 小間, 篤 |
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著者 ローマ字 | ||||||
Ueno, Keiji | ||||||
著者 ローマ字 | ||||||
Sasaki, Kentaro | ||||||
著者 ローマ字 | ||||||
Saiki, Koichiro | ||||||
著者 ローマ字 | ||||||
Koma, Atsushi | ||||||
著者 所属 | ||||||
東京大学大学院理学系研究科(現 : 埼玉大学大学院理工学研究科物質科学部門) | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University) | ||||||
書誌情報 |
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW 巻 38, 号 1B, p. 511-514, 発行日 1999 |
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年月次 | ||||||
1999 | ||||||
出版者名 | ||||||
出版者 | 社団法人応用物理学会 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00214922 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1143/JJAP.38.511 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We propose a new method to fabricate nano-scale devices consisting of C-60. C-60 molecules have a spherical shape with a diameter of 0.7 nm. It may be possible to consider each molecule as a quantum dot to fabricate a single-electron-tunneling device which will work at room temperature. In order to control the position of a C-60 molecule on a device substrate, we have developed a "selective growth" technique on layered material heterostructure substrates, which utilizes the difference in the nucleation process of C-60 molecules on various kinds of layered materials. To clarify the selective,growth mechanism, the density of C-60 islands grown on different layered material substrates was measured using atomic force microscopy. It has been suggested that differences in the adsorption and diffusion energies of a C60 molecule on layered materials influence the selective growth. | |||||
版 | ||||||
[著者版] | ||||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-04-22 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1002622 |