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Fabrication of GaAs quantum dots on a bilayer-GaSe terminated Si(111) substrate
https://sucra.repo.nii.ac.jp/records/13240
https://sucra.repo.nii.ac.jp/records/132403e46e26c-75e8-4be5-860a-85630b52e6cf
名前 / ファイル | ライセンス | アクション |
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A1002624.pdf (1.7 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-04-22 | |||||
タイトル | ||||||
タイトル | Fabrication of GaAs quantum dots on a bilayer-GaSe terminated Si(111) substrate | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | quantum dot | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | droplet epitaxy | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | GaAs | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | GaSe | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | bilayer-GaSe | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Si(111) | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | surface termination | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
上野, 啓司
× 上野, 啓司× 斉木, 幸一朗× 小間, 篤 |
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著者 ローマ字 | ||||||
Ueno, Keiji | ||||||
著者 ローマ字 | ||||||
Saiki, Koichiro | ||||||
著者 ローマ字 | ||||||
Koma, Atsushi | ||||||
著者 所属 | ||||||
東京大学大学院理学系研究科(現 : 埼玉大学大学院理工学研究科物質科学部門) | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, School of Science, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University) | ||||||
書誌情報 |
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 巻 40, 号 3B, p. 1888-1891, 発行日 2001 |
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年月次 | ||||||
2001-3 | ||||||
出版者名 | ||||||
出版者 | 社団法人応用物理学会 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00214922 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We have developed a novel method to fabricate self-assembled quantum dots (QDs) of compound semiconductors on a Si(111) substrate using the so-called 'droplet epitaxy' technique. In order to fabricate QDs on a Si substrate by droplet epitaxy, we examined the termination of a Si (111) surface with a bilayer-GaSe. This surface is formed by depositing I monolayer Ga on a Si(111)-7x7 surface and annealing in a Se flux at 520 degreesC. Then Ga atoms are deposited to form Ga droplets on this surface, and the sample is annealed in an As flux to transform Ga droplets into GaAs QDs. It is revealed that GaAs QDs with a diameter as small as 10 nm and a height of 5 nm can be formed on the bilayer-GaSe/Si(111) substrate at a maximum density of 8.4 x 10(10) cm(-2). Using this method a new technique will be available to fabricate QDs of many kinds of compound semiconductors on the Si(111) substrate. | |||||
版 | ||||||
[著者版] | ||||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-04-22 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1002624 |