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Twin photoluminescence peaks from single isoelectronic traps in nitrogen delta-doped GaAs
https://sucra.repo.nii.ac.jp/records/13275
https://sucra.repo.nii.ac.jp/records/13275b3ab5463-6cb6-4662-b1a5-f815fbd30735
名前 / ファイル | ライセンス | アクション |
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A1002696.pdf (207.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-06-04 | |||||
タイトル | ||||||
タイトル | Twin photoluminescence peaks from single isoelectronic traps in nitrogen delta-doped GaAs | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | isoelectronic trap | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | single photon | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | delta-doping | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Endo, Y.
× Endo, Y.× 土方, 泰斗× 矢口, 裕之× Yoshida, S.× Yoshita, M.× Akiyama, H.× Nakajima, F.× Katayama, R.× Onabe, K. |
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著者 ローマ字 | ||||||
Endo, Y. | ||||||
著者 ローマ字 | ||||||
Hijikata, Yasuto | ||||||
著者 ローマ字 | ||||||
Yaguchi, Hiroyuki | ||||||
著者 ローマ字 | ||||||
Yoshida, S. | ||||||
著者 ローマ字 | ||||||
Yoshita, M. | ||||||
著者 ローマ字 | ||||||
Akiyama, H. | ||||||
著者 ローマ字 | ||||||
Nakajima, F. | ||||||
著者 ローマ字 | ||||||
Katayama, R. | ||||||
著者 ローマ字 | ||||||
Onabe, K. | ||||||
著者 所属 | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科数理電子情報部門 | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科数理電子情報部門 | ||||||
著者 所属(別言語) | ||||||
Department of Electrical and Electronic Systems, Saitama University | ||||||
著者 所属(別言語) | ||||||
Department of Electrical and Electronic Systems, Saitama University | ||||||
著者 所属(別言語) | ||||||
Department of Electrical and Electronic Systems, Saitama University | ||||||
著者 所属(別言語) | ||||||
Department of Electrical and Electronic Systems, Saitama University | ||||||
著者 所属(別言語) | ||||||
Institute for Solid State Physics, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Institute for Solid State Physics, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Advanced Materials Science, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Advanced Materials Science, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Advanced Materials Science, The University of Tokyo | ||||||
書誌情報 |
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 巻 40, 号 6, p. 2110-2112, 発行日 2008 |
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年月次 | ||||||
2008-4 | ||||||
出版者名 | ||||||
出版者 | ELSEVIER SCIENCE BV | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 13869477 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1016/j.physe.2007.10.047 | |||||
関連サイト | ||||||
内容記述タイプ | Other | |||||
内容記述 | http://www.sciencedirect.com/science/journal/13869477 | http://www.sciencedirect.com/science/journal/13869477 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We report on twin emission peaks observed from single isoelectronic traps formed by nitrogen pairs in nitrogen delta-doped GaAs by high-energy resolution micro-photoluminescence (PL) spectroscopy. The twin PL peaks show almost the same intensity with narrow linewidths of 20-50 mu eV, which are considerably smaller than that ever reported for isoelectronic traps in GaAs:N. The higher and lower energy luminescence transitions were linearly polarized in the [1 (1) over bar 0] and [1 1 0] directions, respectively, indicating that the two exciton states have completely orthogonal relations with each other. The fact that any pair of the twin PL peaks has the same polarization properties suggests that the splitting is due to the anisotropy between [1 (1) over bar 0] and [1 1 0] directions in the host crystal and is possibly explained by the strain anisotropy in the sample. (C) 2007 Elsevier B.V. All rights reserved. | |||||
版 | ||||||
[著者版] | ||||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-06-04 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1002696 |