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Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
https://sucra.repo.nii.ac.jp/records/13360
https://sucra.repo.nii.ac.jp/records/1336043372c1e-9bb9-406a-a9ed-52b33894b52a
名前 / ファイル | ライセンス | アクション |
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A1002806.pdf (172.8 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-12-03 | |||||
タイトル | ||||||
タイトル | Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | silicon carbide (SiC) | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | (0001) Si-face | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | oxidation | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | in-situ spectroscopic ellipsometry | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Deal-Grove model | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Massoud empirical equation | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Yamamoto, Takeshi
× Yamamoto, Takeshi× 土方, 泰斗× 矢口, 裕之× 吉田, 貞史 |
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著者 ローマ字 | ||||||
Yamamoto, Takeshi | ||||||
著者 ローマ字 | ||||||
Hijikata, Yasuto | ||||||
著者 ローマ字 | ||||||
Yaguchi, Hiroyuki | ||||||
著者 ローマ字 | ||||||
Yoshida, Sadafumi | ||||||
著者 所属 | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科数理電子情報部門 | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科数理電子情報部門 | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科数理電子情報部門 | ||||||
著者 所属(別言語) | ||||||
著者 所属(別言語) | ||||||
Division of Mathematics, Electronics and Informatics, Graduate School of Science and Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Division of Mathematics, Electronics and Informatics, Graduate School of Science and Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Division of Mathematics, Electronics and Informatics, Graduate School of Science and Engineering, Saitama University | ||||||
書誌情報 |
JAPANESE JOURNAL OF APPLIED PHYSICS 巻 47, 号 10, p. 7803-7806, 発行日 2008 |
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年月次 | ||||||
2008-10 | ||||||
出版者名 | ||||||
出版者 | 応用物理学会 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00214922 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1143/JJAP.47.7803 | |||||
関連サイト | ||||||
内容記述タイプ | Other | |||||
内容記述 | http://jjap.ipap.jp/link?JJAP/47/7803/ | http://jjap.ipap.jp/link?JJAP/47/7803/ | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Thermal oxidation process of silicon carbide (SiC) has been studied by performing in-situ spectroscopic ellipsometry. In our previous work, we, for the first time, found that the growth rates of SiC(000 (1) over bar) C-face at oxidation thicknesses less than around 20 nm are much higher than those given by the Deal-Grove (D-G) model. In this report, we show that such a growth rate enhancement occurs also in the oxidation of SiC(0001) Si-face. By applying the empirical equation proposed by Massoud et al. [J. Electrochem. Soc. 132 (1985) 2685] to the oxidation of SiC Si-face and comparing the temperature and oxygen partial pressure dependences of oxidation rate parameters obtained with those for C-face, we discuss the difference in oxidation mechanism between SiC Si- and C-faces. [DOI: 10.1143/JJAP.47.7803] | |||||
版 | ||||||
[著者版] | ||||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
アイテムID | ||||||
A1002806 |