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Giant magneto-resistance in p-n junction composed of beta-FeSi_2-Si
https://sucra.repo.nii.ac.jp/records/14450
https://sucra.repo.nii.ac.jp/records/144500d5cac3d-3b98-42f2-9019-8ab872a546e9
名前 / ファイル | ライセンス | アクション |
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A1002400.pdf (649.8 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-01-24 | |||||
タイトル | ||||||
タイトル | Giant magneto-resistance in p-n junction composed of beta-FeSi_2-Si | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | beta-FeSi_2 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | p-n junction | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | large magneto-resistance | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | magneto-transistor | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | high fields | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
山田, 興治
× 山田, 興治× Ogawa, Hirohisa× 本多, 善太郎× Miyake, Kiyoshi |
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著者 ローマ字 | ||||||
Yamada, Koji | ||||||
著者 ローマ字 | ||||||
Ogawa, Hirohisa | ||||||
著者 ローマ字 | ||||||
Honda, Zentarou | ||||||
著者 ローマ字 | ||||||
Miyake, Kiyoshi | ||||||
著者 所属 | ||||||
埼玉大学地域共同研究センター | ||||||
著者 所属 | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科物質科学部門 | ||||||
著者 所属(別言語) | ||||||
Cooperative Research Center Saitama University | ||||||
著者 所属(別言語) | ||||||
著者 所属(別言語) | ||||||
Graduate School of Science and Engineering, Saitama University | ||||||
書誌情報 |
JOURNAL OF ALLOYS AND COMPOUNDS 巻 423, 号 1-2, p. 197-200, 発行日 2006 |
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年月次 | ||||||
2006-10 | ||||||
出版者名 | ||||||
出版者 | ELSEVIER SCIENCE SA | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 09258388 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1016/j.jallcom.2006.01.101 | |||||
関連サイト | ||||||
内容記述タイプ | Other | |||||
内容記述 | http://www.sciencedirect.com/science/journal/09258388 | http://www.sciencedirect.com/science/journal/09258388 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Fe-Si alloy system was investigated on the magneto-resistance (MR) effects in a temperature range between 77K-RT and in high fields up to 30 T. The samples were prepared by sputtering Fe(200 nm) on n-Si(1 0 0) surface and variously annealed up to beta-FeSi2 are obtained. The MR effects were found small less than several %, negative at RT and positive at T=77 K for Fe-rich samples. For a sample at the stoichiometric beta-Fe-Si-2 on n-Si as a p-n junction, we found a positive MR as large as 30% at RT in B = 30 T. The physical mechanism of the large MR is tentatively given by the carrier freeze-out effect in between the p-n. (c) 2006 Elsevier B.V. All rights reserved. | |||||
版 | ||||||
[著者版] | ||||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-01-24 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1002400 |