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酸化中のSi及びC原子のSiC層への放出現象における理論的検討<研究成果報告>
https://sucra.repo.nii.ac.jp/records/16454
https://sucra.repo.nii.ac.jp/records/164544a92a6db-8e9e-46e5-a787-7682c764402b
名前 / ファイル | ライセンス | アクション |
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KY-AN00095842-44-09.pdf (617.5 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2014-02-24 | |||||
タイトル | ||||||
タイトル | 酸化中のSi及びC原子のSiC層への放出現象における理論的検討<研究成果報告> | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | oxidation | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | MOS structure | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | SiC-oxide interface | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Si and C emission | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | interstitial | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | diffusivity | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
タイトル(別言語) | ||||||
その他のタイトル | Theoretical studies for Si and C emission into SiC layer during oxidation | |||||
著者 |
土方, 泰斗
× 土方, 泰斗× 矢口, 裕之× 吉田, 貞史 |
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著者 ローマ字 | ||||||
HIJIKATA, Yasuto | ||||||
著者 ローマ字 | ||||||
YAGUCHI, Hiroyuki | ||||||
著者 ローマ字 | ||||||
YOSHIDA, Sadafumi | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科数理電子情報部門 | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科数理電子情報部門 | ||||||
著者 所属 | ||||||
産業技術総合研究所 先進パワーエレクトロニクス研究センター | ||||||
著者 所属(別言語) | ||||||
Division of Mathematics Electronics and Informatics, Graduate School of Science and Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Division of Mathematics Electronics and Informatics, Graduate School of Science and Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Advanced Power Electronics Research Center, AIST | ||||||
書誌情報 |
埼玉大学工学部紀要 第一部 論文集 巻 44, p. 34-37, 発行日 2013 |
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年月次 | ||||||
2010 | ||||||
出版者名 | ||||||
出版者 | 埼玉大学工学部広報委員会 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 18804446 | |||||
概要 | ||||||
内容記述タイプ | Other | |||||
内容記述 | To understand the structure of SiC-oxide interface more in detail, we propose a theory for calculating the depth profiles of Si and C emitted into SiC layer during oxidation. Simulations of the depth profiles of Si and C interstitials results in the structures analogous with those observed from a spectroscopic ellipsometry. To determine the diffusivities of Si and C interstitials, we performed capacitance-voltage measurements for examining the re-distribution profiles of nitrogen after oxidation. By comparing between observed and calculated profile, we obtained the self-diffusivity of C interstitials and confirmed that the proposed theory was appropriate to estimate depth profiles of Si and C interstitials emitted into SiC layer. | |||||
版 | ||||||
[出版社版] | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2014-02-24 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
KY-AN00095842-44-09 |