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高精度非接触式等倍露光(マスクアライメント)装置の性能評価
https://doi.org/10.24561/00016525
https://doi.org/10.24561/000165255102e345-96b8-47a2-b5dd-4d93a92b68df
名前 / ファイル | ライセンス | アクション |
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KY-18838278-2-22.pdf (1.6 MB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2010-07-30 | |||||
タイトル | ||||||
タイトル | 高精度非接触式等倍露光(マスクアライメント)装置の性能評価 | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Mask aligner | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Proximity exposure | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Micro fabrication | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ID登録 | ||||||
ID登録 | 10.24561/00016525 | |||||
ID登録タイプ | JaLC | |||||
タイトル(別言語) | ||||||
その他のタイトル | Evaluation of High-resolution Proximity Exposure System | |||||
著者 |
森, 涼太郎
× 森, 涼太郎× 高橋, 幸郎× 大澤, 光明 |
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著者 ローマ字 | ||||||
MORI, Ryotaro | ||||||
著者 ローマ字 | ||||||
TAKAHASHI, Kohro | ||||||
著者 ローマ字 | ||||||
OHSAWA, Mitsuaki | ||||||
著者 所属 | ||||||
埼玉大学工学部電気電子システム工学科 | ||||||
著者 所属 | ||||||
埼玉大学工学部電気電子システム工学科 | ||||||
著者 所属 | ||||||
株式会社エイ・エス・エイ・ピイ | ||||||
著者 所属(別言語) | ||||||
Department of Electrical and Electronic Systems, School of Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Department of Electrical and Electronic Systems, School of Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
ASAP Co., Ltd. | ||||||
書誌情報 |
埼玉大学地域オープンイノベーションセンター紀要 en : Report of Comprehensive Open Innovation Center, Saitama University 巻 2, p. 61-63, 発行日 2010 |
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年月次 | ||||||
2010-7 | ||||||
出版者名 | ||||||
出版者 | 埼玉大学総合研究機構地域オープンイノベーションセンター | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 18838278 | |||||
概要 | ||||||
内容記述タイプ | Other | |||||
内容記述 | High-resolution proximity exposure (mask alignment) system for semiconductor micro fabrication has been developed and evaluated. A novel exposure system has laser displacement meter for high-precision measurement of the gap between the mask and the wafer. The repeatability error of the displacement meter was 0.025μm. The exposure system also contains highly collimated UV source. The illumination intensity uniformity was within 5% and the main wavelength was 365nm. The resolution of the system was 3 μm in proximity exposure (gap: 10 μm) and 1.5 μm in contact exposure. | |||||
版 | ||||||
[出版社版] | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2010-07-31 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
KY-18838278-2-22 |