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Cuデュアルダマシンプロセスにおける電解複合CMPの基礎的研究(第2報)
https://doi.org/10.24561/00016641
https://doi.org/10.24561/0001664174404f94-3871-444b-ab5f-f38874b99866
名前 / ファイル | ライセンス | アクション |
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KY-AA11808968-03-03.pdf (405.6 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2009-05-21 | |||||
タイトル | ||||||
タイトル | Cuデュアルダマシンプロセスにおける電解複合CMPの基礎的研究(第2報) | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Electro-CMP | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | CMP | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Cu | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | XPS | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | surface oxide | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | polishing mechanism | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ID登録 | ||||||
ID登録 | 10.24561/00016641 | |||||
ID登録タイプ | JaLC | |||||
タイトル(別言語) | ||||||
その他のタイトル | Study of Electro-Chemical Mechanical Polishing for Copper Damascene Process (2nd report) | |||||
著者 |
藤田, 隆
× 藤田, 隆× 土肥, 俊郎× 小林, 拓 |
|||||
著者 ローマ字 | ||||||
Fujita, Takashi | ||||||
著者 ローマ字 | ||||||
Doi, Toshiro | ||||||
著者 ローマ字 | ||||||
Kobayashi, Hiromu | ||||||
著者 所属 | ||||||
株式会社東京精密 | ||||||
著者 所属 | ||||||
埼玉大学教育学部 | ||||||
著者 所属 | ||||||
株式会社東京精密 | ||||||
著者 所属(別言語) | ||||||
Tokyo Seimitsu Co.Ltd | ||||||
著者 所属(別言語) | ||||||
Faculty ofEducation, Saitama University | ||||||
著者 所属(別言語) | ||||||
Tokyo Seimitsu Co.Ltd | ||||||
書誌情報 |
埼玉大学地域共同研究センター紀要 en : Report of Cooperative Research Center, Saitama University 巻 3, p. 7-13, 発行日 2003 |
|||||
年月次 | ||||||
2002 | ||||||
出版者名 | ||||||
出版者 | 埼玉大学地域共同研究センター | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 13474758 | |||||
概要 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Electro-CMP(Electro-Chemical Mechanical Polishing) was studied to reduce surface damage on copper and low-K dielectric for copper damascene process. It is indispensable to understand both copper surface oxidation and copper removal mechanism for accurate removal rate control. This study deals with the observation results of the polished copper surface by XPS (X-ray Photoelectron Spectroscopy) and AES(Auger Electron Spectroscopy). In particular, copper samples are measured immediately after polishing to estimate surface oxidation precisely. In addition, the depth profile of oxygen penetration into copper surface was evaluated to measure copper oxide layer thickness. As a result, the surface dipped in slurry for 30 min was oxidized 20A in depth. The formation of CuO on copper surface in Electro-CMP was less than that of conventional CMP. The oxygen penetration in Electro-CMP was loA in depth, less than 15A in conventional CMP. | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2009-06-18 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
KY-AA11808968-03-03 |