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分光偏光解析等によるSiC酸化膜の評価
https://doi.org/10.24561/00016656
https://doi.org/10.24561/0001665622e49913-aa58-493a-86bc-bbd76de3750a
名前 / ファイル | ライセンス | アクション |
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KY-AA11808968-03-18.pdf (501.0 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2009-05-21 | |||||
タイトル | ||||||
タイトル | 分光偏光解析等によるSiC酸化膜の評価 | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | SiC | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | oxide/SiC Interface | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | spectroscopic ellipsometry | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | AR-XPS | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | UPS | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | C-V | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | FT-IR | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ID登録 | ||||||
ID登録 | 10.24561/00016656 | |||||
ID登録タイプ | JaLC | |||||
タイトル(別言語) | ||||||
その他のタイトル | Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry | |||||
著者 |
吉田, 貞史
× 吉田, 貞史× 矢口, 裕之× 土方, 泰斗× 折原, 操 |
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著者 ローマ字 | ||||||
Sadafumi Yoshida | ||||||
著者 ローマ字 | ||||||
Hiroyuki Yaguchi | ||||||
著者 ローマ字 | ||||||
Yasuto Hijikata | ||||||
著者 ローマ字 | ||||||
Misao Orihara | ||||||
著者 所属 | ||||||
埼玉大学工学部電気電子システム工学科 | ||||||
著者 所属 | ||||||
埼玉大学工学部電気電子システム工学科 | ||||||
著者 所属 | ||||||
埼玉大学工学部電気電子システム工学科 | ||||||
著者 所属 | ||||||
埼玉大学工学部電気電子システム工学科 | ||||||
著者 所属(別言語) | ||||||
Department ofElectric and Electronic Systems Engineering, Faculty of Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Department ofElectric and Electronic Systems Engineering, Faculty of Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Department ofElectric and Electronic Systems Engineering, Faculty of Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Department ofElectric and Electronic Systems Engineering, Faculty of Engineering, Saitama University | ||||||
書誌情報 |
埼玉大学地域共同研究センター紀要 en : Report of Cooperative Research Center, Saitama University 巻 3, p. 41-48, 発行日 2003 |
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年月次 | ||||||
2002 | ||||||
出版者名 | ||||||
出版者 | 埼玉大学地域共同研究センター | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 13474758 | |||||
概要 | ||||||
内容記述タイプ | Other | |||||
内容記述 | We have developed the method of obtaining the refractive indices of SiC/oxide interfaces by use of spectroscopic ellipsometry, and by using this method we have characterized SiC/oxide interfaces obtained by various oxidation methods and/or post oxidation annealing (POA). We have designed and fabricated the system with which in situ spectroscopic ellipsometry measurements can be carried out. We have observed the initial oxidation stage of SiC. We have also observed the changes of the refractive indices of interfaces by annealing in Ar atmosphere (Ar POA). The changes of atomic bond states at the interface by Ar POA were also observed by angle-resolved XPS and UPS, and compared with the results obtained form optical measurements and C-V measurements. We have developed the measurement method of obtaining carrier density and mobility distribution in SiC wafers by use of microscopic FT-IR. We have shown that the values obtained by this method well agree with those obtained from Hall measurements, suggesting that the method is useful to characterize electrical properties of SiC wafers quantitatively, non-destructively and without contact. | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2009-06-25 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
KY-AA11808968-03-18 |