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高圧半導体保護用エッチングヒューズの開発
https://doi.org/10.24561/00016733
https://doi.org/10.24561/0001673375cd9a8c-7a60-4459-9f6d-76735f9d9630
名前 / ファイル | ライセンス | アクション |
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KY-AA11808968-05-12.pdf (409.8 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2009-05-01 | |||||
タイトル | ||||||
タイトル | 高圧半導体保護用エッチングヒューズの開発 | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Fuse | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | I2t | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Protection ofsemiconductors | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ID登録 | ||||||
ID登録 | 10.24561/00016733 | |||||
ID登録タイプ | JaLC | |||||
タイトル(別言語) | ||||||
その他のタイトル | Developmentof the High Votage Etching Fuse for Protecting Semiconductors | |||||
著者 |
浅山, 三夫
× 浅山, 三夫× 広瀬, 健吾× 山納, 康× 石川, 雄三× 小林, 信一 |
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著者 ローマ字 | ||||||
Asayama, Mitsuo | ||||||
著者 ローマ字 | ||||||
Hirose, Kengo | ||||||
著者 ローマ字 | ||||||
Yamano, Yasushi | ||||||
著者 ローマ字 | ||||||
Ishikawa, Yuhzoh | ||||||
著者 ローマ字 | ||||||
Kobayashi, Shinichi | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科 | ||||||
著者 所属 | ||||||
埼玉大学工学部産学官連携研究員 | ||||||
著者 所属 | ||||||
埼玉大学工学部電気電子システム工学科 | ||||||
著者 所属 | ||||||
根本特殊化学株式会社 | ||||||
著者 所属 | ||||||
埼玉大学工学部電気電子システム工学科 | ||||||
著者 所属(別言語) | ||||||
Graduate School of Science and Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Industry-University-Govemment Cooperation Researcher, Saitama Univerity | ||||||
著者 所属(別言語) | ||||||
Department of ElectricaI and Electronic Systems, Saitama University | ||||||
著者 所属(別言語) | ||||||
Nemoto & Co.,LTD. | ||||||
著者 所属(別言語) | ||||||
Department of ElectricaI and Electronic Systems, Saitama University | ||||||
書誌情報 |
埼玉大学地域共同研究センター紀要 en : Report of Cooperative Research Center, Saitama University 巻 5, p. 53-59, 発行日 2005 |
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年月次 | ||||||
2004 | ||||||
出版者名 | ||||||
出版者 | 埼玉大学地域共同研究センター | |||||
出版者名(別言語) | ||||||
出版者 | Cooperative Research Center, Saitama University | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 13474758 | |||||
概要 | ||||||
内容記述タイプ | Other | |||||
内容記述 | To develop high voltage etching fuse for protecting semiconductors, two tests were conducted in this research. One is the test of various types of 600V rating fuse. The test results showed that the fuse having 6 series breaking points exhibited better current breaking characteristics than those having other breaking points. The otper is the test of 6kV rating etching fuse by connecting 8pieces of600V fuse element in series. Good breaking performance and small I2t value were obtained. Therefore it will be possible to produce a high voltage rating fuse having lower I2t value than those ofcurrent products. |
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資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2009-06-17 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
KY-AA11808968-05-12 |