@techreport{oai:sucra.repo.nii.ac.jp:00011235,
 author = {田中, 規夫},
 month = {},
 note = {The rapid recrystallization of amorphous silicon a-Si has been extensively studied using laser annealing, infrared (IR)-lamp heating and rapid thermal annealing (RTA) for further enlargement of the crystalline grain size and improvement of the performance of poly-Si thin film transistors (TFTs) [1-5].
Recently, the argon microplasma jet at ambient pressure has been applied for the rapid recrystallization of a-Si. Highly crystallized poly-Si films were synthesized up to ~2-μm-thick a-Si films by adjusting the rf power Prf, translating velocity of substrate stage and flow rate of Ar Fr(Ar) [6]. In this paper, we report the rapid recrystallization of a-Si and its related materials such as a-Si(P), a-Si(B), a-SiGe, and a-SiOH using rf microplasma jets of argon at ambient
pressure., text, application/pdf},
 title = {大型湿地植生の洪水によるダメージと回復過程を考慮した適正洪水導入規模に関する研究},
 year = {2005},
 yomi = {タナカ, ノリオ}
}