{"created":"2023-05-15T15:24:19.074505+00:00","id":11484,"links":{},"metadata":{"_buckets":{"deposit":"2c8fd2aa-91fb-4458-8d97-6b4aa4d09f70"},"_deposit":{"created_by":3,"id":"11484","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"11484"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00011484","sets":["94:427"]},"author_link":["18434","18478","16578"],"item_118_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"平成17-18年度","bibliographic_titles":[{"bibliographic_title":"科学研究費補助金(基盤研究(c))研究成果報告書"}]}]},"item_118_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-07-10","subitem_date_issued_type":"Created"}]},"item_118_description_13":{"attribute_name":"形態","attribute_value_mlt":[{"subitem_description":"51p.","subitem_description_type":"Other"}]},"item_118_description_18":{"attribute_name":"識別番号 その他","attribute_value_mlt":[{"subitem_description":"KAKEN: 17560004","subitem_description_type":"Other"}]},"item_118_description_20":{"attribute_name":"目次","attribute_value_mlt":[{"subitem_description":"本研究に関する論文\n\"Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys\" H. Yaguchi, T. Morioke, T. Aoki, H. Shimizu, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, N. Usami, D. Aoki, and K. Onabe Physica Status Solidi (c) Vol. 3, No.6, pp. 1907-1910 (2006). 公開不可のため削除\n\"Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy\" Y. Endo, K. Tanioka, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, w. Ono, F. Nakajima, R. Katayama, K. Onabe Journal of Crystal Growth Vol. 298, pp. 73-75 (2007)  公開不可のため削除\n\"Micro-Raman study on the improvement of luminescence efficiency of GaAsN alloys\" K. Tanioka, Y. Endo, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, K.Onabe Journal of Crystal Growth Vol. 298, pp.131-134 (2007) 公開不可のため削除.\n\"Photoluminescence Study of Isoelectronic Traps in Dilute GaAsN alloys\" H. Yaguchi, T. Aoki, T. Morioke, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, D. Aoki, and K. Onabe Physica Status Solidi (c) (to be published) 公開不可のため削除\n\n国際会議\n\"Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys\" H. Yaguchi, T. Morioke, T. Aoki, H. Shimizu, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, N. Usami, D. Aoki, and K. Onabe 6th International Conference on Nitride Semiconductors (Mo-P-097) (Bremen, Germany) 2005. 8.\n\"Micro Raman study on the improvement of luminescence efficiency of GaAsN alloys\" K. Tanioka, Y. Endo, Y. Hijikata, H. Yaguchi, S. Yoshida, N. Yoshita, H. Akiyama, and K. Onabe 13th International Conference on Metalorganic Vapor Phase Epitaxy (Tu-P.53) (Miyazaki) 2006. 5. 23\n\"Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy\" Y. Endo, K. Tanioka, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, W. Ono, F. Nakajima, R. Katayama, and K. Onabe 13th International Conference on Metalorganic Vapor Phase Epitaxy (Tu-P.96) (Miyazaki) 2006. 5. 23\n\"Micro-photoluminescence study on nitrogen atomic-layer doping in GaAs\" H. Yaguchi Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, p. 51 (Bonassola, Italy) 2006. 9.20 \nPhotoluminescence Study of Isoelectronic Traps in Dilute GaAsN alloys H. Yaguchi, T. Aoki, T. Morioke, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, D. Aoki, and K. Onabe International Workshop on Nitride Semiconductors 2006 (IWN2006) MoP2-71 , (Kyoto) 2006.10.23\n\n国内会議\n「ラマン分光を用いたGaAsN混晶の光照射による構造変化の評価」 矢口裕之,清水博史,森桶利和,青木貴嗣,土方泰斗,吉田貞史,宇佐美徳隆,吉田正裕,秋山英文,青木大一郎,尾鍋研太郎 第66回応用物理学会学術講演会(9p-ZA-18)(徳島)2005.9.9\n「ラマン分光を用いたGaAsN混晶の発光効率向上に関する研究」 谷岡健太郎、遠藤雄太、土方泰斗、矢口裕之、吉田貞史、青木大一郎、尾鍋研太郎 第53回応用物理学関係連合講演会(24a-p-7)(東京)2006.3.24\n\"Micro-photoluminescence study of nitrogen atomic-layer doped GaAs\" Y. Endo, K. Tanioka, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, w. Dno, F. Nakajima, R. Katayama, and K. Onabe 25th Electronic Materials Symposium (14) pp. 238-239 (Izu-no-kuni) 2006. 7. 6 出版元審議中のため削除\n「窒素を8 ドープしたGaAsにおける等電子トラップの顕微フォトルミネッセンス測定」 遠藤雄太、谷岡健太郎、土方泰斗、矢口裕之、吉田貞史、吉田正裕、秋山英文、中島史博、片山竜二、尾鍋研太郎 第67回応用物理学会学術講演会(29p-B-ll)p.293(滋賀)2006.8.29\n「窒素をデルタドープしたGaAsにおける等電子トラップからの発光」 遠藤雄太、土方泰斗、矢口裕之、吉田貞史、吉田正裕、秋山英文、中島史博、片山竜二、尾鍋研太郎 第54回応用物理学連合学術講演会(29p-q-14)p.358(相模原)2007.3.29","subitem_description_type":"Other"}]},"item_118_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_118_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_118_other_language_22":{"attribute_name":"その他の言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_118_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Yaguchi, Hiroyuki"},{"subitem_text_value":"Yoshida, Sadafumi"},{"subitem_text_value":"Hijikata, Yasuto"}]},"item_118_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"KK000459"}]},"item_118_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"埼玉大学大学院理工学研究科数理電子情報部門"},{"subitem_text_value":"埼玉大学大学院理工学研究科数理電子情報部門"},{"subitem_text_value":"埼玉大学大学院理工学研究科数理電子情報部門"}]},"item_118_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Graduate School of Science and Engineering, Saitama University"},{"subitem_text_value":"Graduate School of Science and Engineering, Saitama University"},{"subitem_text_value":"Graduate School of Science and Engineering, Saitama University"}]},"item_118_text_6":{"attribute_name":"著者 役割","attribute_value_mlt":[{"subitem_text_value":"研究代表者"},{"subitem_text_value":"研究分担者"},{"subitem_text_value":"研究分担者"}]},"item_118_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2007-3"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"矢口, 裕之"},{"creatorName":"ヤグチ, ヒロユキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"16578","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"sZUxYNBe","nameIdentifierScheme":"研究者総覧","nameIdentifierURI":"http://s-read.saitama-u.ac.jp/researchers/pages/researcher/sZUxYNBe"}]},{"creatorNames":[{"creatorName":"吉田, 貞史"},{"creatorName":"ヨシダ, サダフミ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"18478","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土方, 泰斗"},{"creatorName":"ヒジカタ, ヤスト","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"18434","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"BVgusmBx","nameIdentifierScheme":"研究者総覧","nameIdentifierURI":"http://s-read.saitama-u.ac.jp/researchers/pages/researcher/BVgusmBx"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-23"}],"displaytype":"detail","filename":"KK000459.pdf","filesize":[{"value":"3.4 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KK000459.pdf","url":"https://sucra.repo.nii.ac.jp/record/11484/files/KK000459.pdf"},"version_id":"6eeb87c0-9d7f-43db-818a-8c4cca7e2772"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"等電子トラップを利用した単一光子発生素子の作製","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"等電子トラップを利用した単一光子発生素子の作製"}]},"item_type_id":"118","owner":"3","path":["427"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-07-10"},"publish_date":"2008-07-10","publish_status":"0","recid":"11484","relation_version_is_last":true,"title":["等電子トラップを利用した単一光子発生素子の作製"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T10:10:53.898198+00:00"}