{"created":"2023-05-15T15:25:20.771896+00:00","id":12941,"links":{},"metadata":{"_buckets":{"deposit":"6644f7f9-1d15-4a90-9b36-d1fcb84854a5"},"_deposit":{"created_by":3,"id":"12941","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"12941"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00012941","sets":["94:426"]},"author_link":["18434","20430","16578"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"053710-7","bibliographicPageStart":"053710-1","bibliographicVolumeNumber":"100","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_119_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2007-10-16","subitem_date_issued_type":"Created"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Wet and dry oxide films-4H-SiC epitaxial (000 (1) over bar) C-face interfaces have been characterized by capacitance-voltage (C-V) measurements and soft x-ray excited photoemission spectroscopy (SX-PES) and hard x-ray excited photoemission spectroscopy (HX-PES) using synchrotron radiation. The interface state density for wet oxidation is much smaller than that for dry oxidation at any energy level. In the PES measurements, intermediate oxidation states such as Si1+ and Si3+ were observed. In addition, the areal densities of these states were found to be in a good correspondence with those of the interface states. The reasons for the good electrical characteristics of metal-oxide-semiconductor devices fabricated by wet oxidation are discussed in terms of the depth profiles of oxide films derived from the SX-PES and HX-PES results. (c) 2006 American Institute of Physics.","subitem_description_type":"Abstract"}]},"item_119_description_21":{"attribute_name":"注記","attribute_value_mlt":[{"subitem_description":"copyright(c)2006 American Institute of Physics.","subitem_description_type":"Other"}]},"item_119_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_119_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_119_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_119_relation_16":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1063/1.2345471","subitem_relation_type_select":"DOI"}}]},"item_119_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_119_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Hijikata, Yasuto"},{"subitem_text_value":"Yaguchi, Hiroyuki"},{"subitem_text_value":"Yoshida, Sadafumi"},{"subitem_text_value":"Takata, Yasutaka"},{"subitem_text_value":"Kobayashi, Keisuke"},{"subitem_text_value":"Nohira, Hiroshi"},{"subitem_text_value":"Hattori, Takeo"}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1002272"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"埼玉大学大学院理工学研究科数理電子情報部門電気電子システム領域"},{"subitem_text_value":"埼玉大学工学部電気電子工学科"},{"subitem_text_value":"埼玉大学工学部電気電子工学科"},{"subitem_text_value":"独立行政法人理化学研究所"},{"subitem_text_value":"財団法人高輝度光科学研究センター"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Graduate School of Science and Engineering, Saitama University"},{"subitem_text_value":"Department of Electrical and Electronic Systems Engineering, Saitama University"},{"subitem_text_value":"Department of Electrical and Electronic Systems Engineering, Saitama University"},{"subitem_text_value":"RIKEN (The Institute of Physical and Chemical Research)"},{"subitem_text_value":"Japan Synchrotron Radiation Research Institute（JASRI）"},{"subitem_text_value":"Musashi Institute of Technology"},{"subitem_text_value":"Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology"}]},"item_119_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2006-9"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"土方, 泰斗"},{"creatorName":"ヒジカタ, ヤスト","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"矢口, 裕之"},{"creatorName":"ヤグチ, ヒロユキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"吉田, 貞史"},{"creatorName":"ヨシダ, サダフミ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"A1002272.pdf","filesize":[{"value":"121.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A1002272.pdf","url":"https://sucra.repo.nii.ac.jp/record/12941/files/A1002272.pdf"},"version_id":"2acb598c-27fe-463c-9ec9-0c3b78e746da"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"RAY PHOTOELECTRON-SPECTROSCOPY","subitem_subject_scheme":"Other"},{"subitem_subject":"C(000(1)OVER-BAR) FACE","subitem_subject_scheme":"Other"},{"subitem_subject":"SYNCHROTRON-RADIATION","subitem_subject_scheme":"Other"},{"subitem_subject":"INTERFACE STRUCTURES","subitem_subject_scheme":"Other"},{"subitem_subject":"SILICON-CARBIDE","subitem_subject_scheme":"Other"},{"subitem_subject":"ELLIPSOMETRY","subitem_subject_scheme":"Other"},{"subitem_subject":"STATES","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Characterization of oxide films on 4H-SiC epitaxial (000(1)over-bar) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Characterization of oxide films on 4H-SiC epitaxial (000(1)over-bar) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation"}]},"item_type_id":"119","owner":"3","path":["426"],"pubdate":{"attribute_name":"公開日","attribute_value":"2007-10-17"},"publish_date":"2007-10-17","publish_status":"0","recid":"12941","relation_version_is_last":true,"title":["Characterization of oxide films on 4H-SiC epitaxial (000(1)over-bar) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T19:01:06.594167+00:00"}