@article{oai:sucra.repo.nii.ac.jp:00013006,
 author = {小林, 秀彦 and 高野, 俊行 and 森, 利之 and 山村, 博 and 三田村, 孝},
 issue = {1138},
 journal = {日本セラミックス協会学術論文誌},
 month = {},
 note = {http://ci.nii.ac.jp/naid/110002289078/ | http://ci.nii.ac.jp/naid/110002289078/, The effect of temperature, heating rate and addition of ZrSiO_4 seed crystals on the preparation of ZrSiO_4 powders by the sol-gel process was studied using X-ray powder diffractometry. ZrSiO_4 powders have been prepared by different precursors in Zr(OPr^i)_4-Si(OEt)_4, Zr(OPr^i)_4-SiO_2 sol, ZrOCL_2・8 H_2O-Si(OEt)_4 and ZrOCl_2・8H_2O-SiO_2 sol groups. The formation rate of ZrSiO_4 was higher in Si(OEt)_4 than in SiO_2 sol. The formation rate was influenced by heating rate, and, in particular, increased remarkably below 2.5 K/min. When a small amount of commercial ZrSiO_4 was added to the powder of precursor composition as seed crystals, ZrSiO_4 powder with a purity of 94-96% was formed at 1600°-1650℃. It was found that the addition of seeds results in lowering of the formation temperature of ZrSiO_4 by about 100℃. On the other hand, a ZrSiO_4 powder of 94-96% purity was obtained by heating the powder of precursor composition at 1300°-1350℃ for 1 h, followed by re-heating at 1600℃ for 1 h. The results have suggested that the preparation of ZrSiO_4, powder of nearly single phase is possible using the sol-gel process by controlling the seeding and/or the two-stage heating., rights: 社団法人日本セラミックス協会
rights: 本文データは学協会の許諾に基づきCiNiiから複製したものである
relation: IsVersionOf: http://ci.nii.ac.jp/naid/110002289078/, text, application/pdf},
 pages = {567--572},
 title = {ゾル-ゲル法によるZrSiO_4粉末の合成(第1報) : 出発原料及び種子結晶添加の影響},
 volume = {98},
 year = {1990},
 yomi = {コバヤシ, ヒデヒコ and タカノ, トシユキ and モリ, トシユキ and ヤマムラ, ヒロシ and ミタムラタカシ}
}