{"created":"2023-05-15T15:25:26.644426+00:00","id":13078,"links":{},"metadata":{"_buckets":{"deposit":"ee0ccc42-386a-4b48-bb1d-10037e1d1852"},"_deposit":{"created_by":3,"id":"13078","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"13078"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00013078","sets":["94:426"]},"author_link":["20970","20972","20966","20968","20969","20971","20967","20973"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1998","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"150","bibliographicPageStart":"140","bibliographicVolumeNumber":"J81-C-2","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会論文誌. C-II, エレクトロニクス, II-電子素子・応用"}]}]},"item_119_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-01-30","subitem_date_issued_type":"Created"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"宇宙環境で使用される半導体素子には,高温での素子動作ばかりでなく強い耐放射線性が要求される.今回我々は,広いバンドギャップをもつ炭化けい素半導体を用いて作製したMOS構造素子のγ線照射効果を調べた.また酸化膜中の電荷分布の照射による変化も併せて調べ,γ線照射効果のメカニズムを追求した.","subitem_description_type":"Abstract"}]},"item_119_description_21":{"attribute_name":"注記","attribute_value_mlt":[{"subitem_description":"copyright(c)1998 \nIEICE許諾番号:08RB0010 \nhttp://search.ieice.org/index.html","subitem_description_type":"Other"}]},"item_119_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_119_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_119_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"社団法人電子情報通信学会"}]},"item_119_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09151907","subitem_source_identifier_type":"ISSN"}]},"item_119_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[出版社版]"}]},"item_119_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Yoshida, Sadahumi"},{"subitem_text_value":"Yoshikawa, Masahito"},{"subitem_text_value":"Oshima, Takeshi"},{"subitem_text_value":"Ito, Hisayoshi"},{"subitem_text_value":"Nashiyama, Isamu"},{"subitem_text_value":"Takahashi, Yoshihiro"},{"subitem_text_value":"Onishi, Kazunori"},{"subitem_text_value":"Okumura, Hajime"}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1003018"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"埼玉大学工学部"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Faculty of Engineering, Saitama University"}]},"item_119_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"1998-1"}]},"item_119_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"吉田, 貞史"},{"creatorName":"ヨシダ, サダフミ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"吉川, 正人"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"伊藤, 久義"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"梨山, 勇"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"高橋, 芳宏"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"大西, 一功"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"奥村, 元"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"A1003018.pdf","filesize":[{"value":"1.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A1003018.pdf","url":"https://sucra.repo.nii.ac.jp/record/13078/files/A1003018.pdf"},"version_id":"08e41a3b-c476-4b92-9410-8e2ca063ba49"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"炭化けい素","subitem_subject_scheme":"Other"},{"subitem_subject":"6H-SiC","subitem_subject_scheme":"Other"},{"subitem_subject":"MOS","subitem_subject_scheme":"Other"},{"subitem_subject":"γ線","subitem_subject_scheme":"Other"},{"subitem_subject":"固定電荷","subitem_subject_scheme":"Other"},{"subitem_subject":"界面準位","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"炭化けい素半導体MOS構造のγ線照射効果とそのメカニズム(ワイドギャップ半導体とそのデバイス応用論文小特集)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"炭化けい素半導体MOS構造のγ線照射効果とそのメカニズム(ワイドギャップ半導体とそのデバイス応用論文小特集)"}]},"item_type_id":"119","owner":"3","path":["426"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-01-30"},"publish_date":"2008-01-30","publish_status":"0","recid":"13078","relation_version_is_last":true,"title":["炭化けい素半導体MOS構造のγ線照射効果とそのメカニズム(ワイドギャップ半導体とそのデバイス応用論文小特集)"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T12:41:48.261009+00:00"}