@article{oai:sucra.repo.nii.ac.jp:00013096,
 author = {土方, 泰斗 and 吉田, 貞史},
 issue = {4},
 journal = {IEICE transactions on electronics},
 month = {},
 note = {copyright(c)2003 
IEICE許諾番号：08RB0010　
http://search.ieice.org/index.html, text, application/pdf},
 pages = {688--688},
 title = {Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their},
 volume = {E86-C},
 year = {2003},
 yomi = {ヒジカタ, ヤスト and ヨシダ, サダフミ}
}