{"created":"2023-05-15T15:25:27.453476+00:00","id":13097,"links":{},"metadata":{"_buckets":{"deposit":"f8b34ff3-0bda-4742-9aa4-92c2c0f49ffc"},"_deposit":{"created_by":3,"id":"13097","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"13097"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00013097","sets":["94:426"]},"author_link":["21004","21005","21002","21003","21006","20999","21000","18434","21001"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"433","bibliographicPageStart":"426","bibliographicVolumeNumber":"J86-C","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会論文誌. C, エレクトロニクス"}]}]},"item_119_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-01-30","subitem_date_issued_type":"Created"}]},"item_119_description_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_description":"http://search.ieice.org/index.html | http://search.ieice.org/index.html","subitem_description_type":"Other"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"1200℃ドライ酸化やそれに引き続いて行われる熱アニーリングが，酸化膜と4積層周期六方晶炭化ケイ素（4H-SiC）基板の界面に与える影響を調べた．n型及びp型4H-SiC基板を1200℃の乾燥酸素雰囲気中で3時間酸化して50 nmの酸化膜を作製した後，酸化膜を500℃から950℃のアルゴン雰囲気中で3時間熱アニーリングした．その酸化膜を用いて金属/酸化膜/半導体（MOS）構造を形成してC-V特性を測定し，酸化膜と4H-SiC界面の電気特性に及ぼす熱アニーリング効果を調べた．1200℃ドライ酸化膜を用いて形成した4H-SiC MOS構造のC-V特性は，電圧軸に沿って正方向へ大きくシフトした．界面には負電荷が蓄積していた．600℃で3時間の熱アニーリングを行うとC-V特性が負方向へシフトし始め，950℃ 3時間の熱アニーリングで電圧シフトが消失した．一方，p型4H-SiC MOS構造のC-V特性を調べると，n型とは反対に電圧軸に沿って負方向へ大きくシフトした．界面には正電荷が蓄積していた．n型とp型のシフト方向の違いと界面欠陥の荷電状態の関連性について調べ，界面欠陥の熱アニーリングのメカニズムを議論した．","subitem_description_type":"Abstract"}]},"item_119_description_21":{"attribute_name":"注記","attribute_value_mlt":[{"subitem_description":"copyright(c)2003 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Tamotsu"},{"subitem_text_value":"Ito, Hisayoshi"},{"subitem_text_value":"Okumura, Hajime"},{"subitem_text_value":"Takahashi, Tetsuo"},{"subitem_text_value":"Tsuchida, Hidekazu"}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1003066"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"埼玉大学工学部"},{"subitem_text_value":"埼玉大学工学部"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Faculty of Engineering, Saitama University"},{"subitem_text_value":"Faculty of Engineering, Saitama 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