@article{oai:sucra.repo.nii.ac.jp:00013211,
 author = {上野, 啓司},
 issue = {11},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {},
 note = {Electrolytically polished surfaces of Ta sheets were anodized in an aqueous KI solution to form Ta_2O_5 films with a relatively high dielectric constant and a high breakdown electric field. Organic field-effect transistors (OFETs) were fabricated on these Ta_2O_5/Ta substrates with a bottom gate configuration. The Ta_2O_5 films anodized at 100 V were about 200 nm thick, and the dielectric strength was as high as 5 MV/cm. A p-type pentacene OFET fabricated on this bottom gate showed the good field-effect mobility of 0.35 cm(2)/V s. By using this high-k gate substrate, it becomes possible to inject a higher amount of charge carriers into organic active layers than on the SiO_2/Si gate conventionally used in most OFETs., text, application/pdf},
 pages = {114503-1--114503-5},
 title = {Anodization of electrolytically polished Ta surfaces for enhancement of carrier injection into organic field effect transistors},
 volume = {98},
 year = {2005},
 yomi = {ウエノ, ケイジ}
}