{"created":"2023-05-15T15:25:32.275492+00:00","id":13211,"links":{},"metadata":{"_buckets":{"deposit":"2c8e0ad3-e631-4b3f-8cfb-b7e07b172faa"},"_deposit":{"created_by":3,"id":"13211","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"13211"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00013211","sets":["94:426"]},"author_link":["18292"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageEnd":"114503-5","bibliographicPageStart":"114503-1","bibliographicVolumeNumber":"98","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_119_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-04-11","subitem_date_issued_type":"Created"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Electrolytically polished surfaces of Ta sheets were anodized in an aqueous KI solution to form Ta_2O_5 films with a relatively high dielectric constant and a high breakdown electric field. Organic field-effect transistors (OFETs) were fabricated on these Ta_2O_5/Ta substrates with a bottom gate configuration. The Ta_2O_5 films anodized at 100 V were about 200 nm thick, and the dielectric strength was as high as 5 MV/cm. A p-type pentacene OFET fabricated on this bottom gate showed the good field-effect mobility of 0.35 cm(2)/V s. By using this high-k gate substrate, it becomes possible to inject a higher amount of charge carriers into organic active layers than on the SiO_2/Si gate conventionally used in most OFETs.","subitem_description_type":"Abstract"}]},"item_119_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_119_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_119_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_119_relation_16":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1063/1.2138807","subitem_relation_type_select":"DOI"}}]},"item_119_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_119_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[出版社版]"}]},"item_119_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Ueno, Keiji"},{"subitem_text_value":"Abe, Shigeomi"},{"subitem_text_value":"Onoki, Ryo"},{"subitem_text_value":"Saiki, Koichiro"}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1002588"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"埼玉大学大学院理工学研究科物質科学部門"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Department of Chemistry, Saitama University"},{"subitem_text_value":"Department of Chemistry, Saitama University"},{"subitem_text_value":"Department of Chemistry, Saitama University"},{"subitem_text_value":"Department of Complexity Science and Engineering, The University of Tokyo"}]},"item_119_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2005-12"}]},"item_119_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"上野, 啓司"},{"creatorName":"ウエノ, ケイジ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"A1002588.pdf","filesize":[{"value":"293.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A1002588.pdf","url":"https://sucra.repo.nii.ac.jp/record/13211/files/A1002588.pdf"},"version_id":"75b8d319-291f-4ee6-8d71-68d2702225c1"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Anodization of electrolytically polished Ta surfaces for enhancement of carrier injection into organic field effect transistors","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Anodization of electrolytically polished Ta surfaces for enhancement of carrier injection into organic field effect transistors"}]},"item_type_id":"119","owner":"3","path":["426"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-04-11"},"publish_date":"2008-04-11","publish_status":"0","recid":"13211","relation_version_is_last":true,"title":["Anodization of electrolytically polished Ta surfaces for enhancement of carrier injection into organic field effect transistors"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T12:38:48.623315+00:00"}