@article{oai:sucra.repo.nii.ac.jp:00013214,
 author = {Iizumi, K and Uchino, Y and 上野, 啓司 and 小間, 篤 and Saiki, Koichiro and Inada, Y and Nagai, K and Iwasa, Y and Mitani, T},
 issue = {12},
 journal = {PHYSICAL REVIEW B},
 month = {},
 note = {Molecular arrangement and electronic structure of a La@C-82 film epitaxially grown on an MoS2 surface have been studied using reflection high-energy electron diffraction and electron energy-loss spectroscopy (EELS). It was revealed that La@C-82 molecules form a close-packed hexagonal lattice on a cleaved face of MoS2 with the intermolecular distance of 1.13+/-0.03 nm. EELS of the La@C-82 film in the valence excitation region indicated seven peaks coming from pi-->pi* transitions together with the pi-plasmon excitation. The absence of a distinct band gap means that the La@C-82 epitaxial him is not semiconducting, but metallic or semimetallic. From the EELS result, we propose an electronic structure diagram of the La@C-82 epitaxial film., Copyright notice(c)2000 American Physical Society. All rights reserved. 
Publisher's version: http://link.aps.org/abstract/PRB/v62/p8281, text, application/pdf},
 pages = {8281--8285},
 title = {Investigation of epitaxial arrangement and electronic structure of a La@ C-82 film grown on an MoS2 surface},
 volume = {62},
 year = {2000},
 yomi = {ウエノ, ケイジ and コマ, アツシ}
}