{"created":"2023-05-15T15:25:32.401991+00:00","id":13214,"links":{},"metadata":{"_buckets":{"deposit":"3d4ce2a4-d75c-4b12-a5d6-a7a6dcee8c76"},"_deposit":{"created_by":3,"id":"13214","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"13214"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00013214","sets":["94:426"]},"author_link":["21218","21219","28761","18292","28762","28764","28763","28765","21217"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageEnd":"8285","bibliographicPageStart":"8281","bibliographicVolumeNumber":"62","bibliographic_titles":[{"bibliographic_title":"PHYSICAL REVIEW B"}]}]},"item_119_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-04-11","subitem_date_issued_type":"Created"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Molecular arrangement and electronic structure of a La@C-82 film epitaxially grown on an MoS2 surface have been studied using reflection high-energy electron diffraction and electron energy-loss spectroscopy (EELS). It was revealed that La@C-82 molecules form a close-packed hexagonal lattice on a cleaved face of MoS2 with the intermolecular distance of 1.13+/-0.03 nm. EELS of the La@C-82 film in the valence excitation region indicated seven peaks coming from pi-->pi* transitions together with the pi-plasmon excitation. The absence of a distinct band gap means that the La@C-82 epitaxial him is not semiconducting, but metallic or semimetallic. From the EELS result, we propose an electronic structure diagram of the La@C-82 epitaxial film.","subitem_description_type":"Abstract"}]},"item_119_description_21":{"attribute_name":"注記","attribute_value_mlt":[{"subitem_description":"Copyright notice(c)2000 American Physical Society. All rights reserved. \nPublisher's version: http://link.aps.org/abstract/PRB/v62/p8281","subitem_description_type":"Other"}]},"item_119_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_119_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_119_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"American Physical Society"}]},"item_119_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"01631829","subitem_source_identifier_type":"ISSN"}]},"item_119_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[出版社版]"}]},"item_119_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Iizumi, K,"},{"subitem_text_value":"Uchino, Y,"},{"subitem_text_value":"Ueno, Keiji"},{"subitem_text_value":"Koma, Atsushi"},{"subitem_text_value":"Saiki, Koichiro"},{"subitem_text_value":"Inada, Y,"},{"subitem_text_value":"Nagai, K,"},{"subitem_text_value":"Iwasa, Y,"},{"subitem_text_value":"Mitani, T"}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1002591"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"&EMPTY&"},{"subitem_text_value":"&EMPTY&"},{"subitem_text_value":"東京大学大学院理学系研究科化学専攻(現 : 埼玉大学大学院理工学研究科物質科学部門)"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Department of Chemistry, School of Science, The University of Tokyo"},{"subitem_text_value":"Department of Chemistry, School of Science, The University of Tokyo"},{"subitem_text_value":"Department of Chemistry, School of Science, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University)"},{"subitem_text_value":"Department of Chemistry, School of Science, The University of Tokyo"},{"subitem_text_value":"Department of Complexity Science and Engineering, Graduate School of Frontier Sciences, The University of Tokyo"},{"subitem_text_value":"Japan Advanced Institute of Science and Technology"},{"subitem_text_value":"Japan Advanced Institute of Science and Technology"}]},"item_119_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2000-9"}]},"item_119_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Iizumi, K"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Uchino, Y"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"上野, 啓司"},{"creatorName":"ウエノ, ケイジ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"小間, 篤"},{"creatorName":"コマ, アツシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Saiki, Koichiro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Inada, Y"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nagai, K"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iwasa, Y"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Mitani, T"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"A1002591.pdf","filesize":[{"value":"233.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A1002591.pdf","url":"https://sucra.repo.nii.ac.jp/record/13214/files/A1002591.pdf"},"version_id":"9cfd885e-deee-46b0-a402-84f8ef9a8f44"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Investigation of epitaxial arrangement and electronic structure of a La@ C-82 film grown on an MoS2 surface","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Investigation of epitaxial arrangement and electronic structure of a La@ C-82 film grown on an MoS2 surface"}]},"item_type_id":"119","owner":"3","path":["426"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-04-11"},"publish_date":"2008-04-11","publish_status":"0","recid":"13214","relation_version_is_last":true,"title":["Investigation of epitaxial arrangement and electronic structure of a La@ C-82 film grown on an MoS2 surface"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T19:20:32.201518+00:00"}