{"created":"2023-05-15T15:25:32.444067+00:00","id":13215,"links":{},"metadata":{"_buckets":{"deposit":"3ab58e24-9ee0-4161-8a3e-e524beaf55f7"},"_deposit":{"created_by":3,"id":"13215","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"13215"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00013215","sets":["94:426"]},"author_link":["21220","21221","18292","21222"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1990","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"329","bibliographicPageStart":"327","bibliographicVolumeNumber":"56","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_119_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-04-11","subitem_date_issued_type":"Created"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Layered transition metal dichalcogenides (MoSe_2, NbSe_2) have been heteroepitaxially grown on (NH_4)_2 Sx (x~2) treated GaAs( 111 )Ga, GaAs( TIT)As surfaces in spite of the large difference in their crystal structures. The in situ observation of reflection high-energy electron diffraction has shown that the grown film hasits own lattice constant even from the first layer. The lattice matching condition, which is severely restricting in the usual heteroepitaxial growth case, is greatly relaxed in the present system because only weak van der Waals forces exist between the grown film and the substrate. This results from the fact that sulfur atoms regularly terminate dangling bonds on the GaAs surface after the (NH_4)_2S_x treatment.","subitem_description_type":"Abstract"}]},"item_119_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_119_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_119_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_119_relation_16":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1063/1.102817","subitem_relation_type_select":"DOI"}}]},"item_119_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_119_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[出版社版]"}]},"item_119_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Ueno, Keiji"},{"subitem_text_value":"Shimada, Toshihiro"},{"subitem_text_value":"Saiki, Koichiro"},{"subitem_text_value":"Koma, Atsushi"}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1002593"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"東京大学大学院理学系研究科(現 : 埼玉大学大学院理工学研究科物質科学部門)"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Department of Chemistry, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University)"},{"subitem_text_value":"Department of Chemistry, The University of Tokyo"},{"subitem_text_value":"Department of Chemistry, The University of Tokyo"},{"subitem_text_value":"Department of Chemistry, The University of Tokyo"}]},"item_119_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"1990-1"}]},"item_119_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"上野, 啓司"},{"creatorName":"ウエノ, ケイジ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Shimada, Toshihiro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"斉木, 幸一朗"},{"creatorName":"サイキ, コウイチロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小間, 篤"},{"creatorName":"コマ, アツシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"A1002593.pdf","filesize":[{"value":"2.0 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A1002593.pdf","url":"https://sucra.repo.nii.ac.jp/record/13215/files/A1002593.pdf"},"version_id":"bcc99044-5b65-4697-9c0b-57fc6d3ef84a"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs (111) surfaces","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs (111) surfaces"}]},"item_type_id":"119","owner":"3","path":["426"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-04-11"},"publish_date":"2008-04-11","publish_status":"0","recid":"13215","relation_version_is_last":true,"title":["Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs (111) surfaces"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T19:20:32.004313+00:00"}