@article{oai:sucra.repo.nii.ac.jp:00013216,
 author = {上野, 啓司 and 斉木, 幸一朗 and Shimada, Toshihiro and 小間, 篤},
 issue = {1},
 journal = {JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS},
 month = {},
 note = {We have grown ultrathin films of layered transition metal dichalcogenides (MoSez,NbSez) heteroepitaxially on cleaved faces of mica (muscovite). This is the first success in the heteroepitaxial growth between highly heterogeneous layered materials having different crystal structures and lattice constants that differ by as much as 58%. The lattice matching condition is greatly loosened in those cases because the growth proceeds with weak van der Waals forces between the substrate and the grown layer. This opens a new way to fabricate a heterostructure composed of many kinds oflayered materials having various physical and chemical properties., text, application/pdf},
 pages = {68--72},
 title = {Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica},
 volume = {8},
 year = {1990},
 yomi = {ウエノ, ケイジ and サイキ, コウイチロウ and コマ, アツシ}
}