@article{oai:sucra.repo.nii.ac.jp:00013222,
 author = {上野, 啓司 and 斉木, 幸一朗 and Shimada, Toshihiro and 小間, 篤},
 issue = {3},
 journal = {応用物理},
 month = {},
 note = {欠陥の少ない高品質有機単結晶薄膜は，電流注入型有機半導体レーザーや高移動度有機電界効果トランジスタの実現に必須である．これらの高機能有機素子を通常の無機半導体基板上に構築できれば，新奇な機能を持つ有機／無機ハイブリッド素子の開発が期待できる．我々は，表面を不活性化したシリコン基板を用い，有機単結晶薄膜成長時に「異方的成長条件」を導入することによって，広範囲にわたって連続した結晶性ドメインの形成を目指している．本稿では，微傾斜シリコン表面をbilayer-GaSeで不活性化した基板上にC60薄膜をエピタキシャル成長する際に，表面不活性化と異方的成長条件がどのような効果をもたらすかについて紹介する．
A high-quality single-crystalline organic thin film is indispensable for the fabrication of organic devices, such as a current-injection organic semiconductor laser and a high-mobility organic field-effect transistor. In addition, it will be possible to fabricate a novel organic/inorganic hybrid device if one can grow a high-quality organic film on an inorganic semiconductor substrate. Now we are trying to fabricate a wide crystalline domain by using a surface-passivated Si substrate, together with the introduction of “anisotropic growth condition” during the growth of the single-crystalline organic film. Here we will present the effects of the surface passivation and the anisotropic growth condition when a C_<60> film is epitaxially grown on a vicinal Si surface passivated by bilayer GaSe., text, application/pdf},
 pages = {322--326},
 title = {表面不活性化シリコン基板上における異方的有機薄膜成長},
 volume = {72},
 year = {2003},
 yomi = {ウエノ, ケイジ and サイキ, コウイチロウ and コマ, アツシ}
}