@article{oai:sucra.repo.nii.ac.jp:00013223,
 author = {上野, 啓司 and Sasaki, Kentaro and Nakahara, Tomonori and 小間, 篤},
 journal = {APPLIED SURFACE SCIENCE},
 month = {},
 note = {http://www.sciencedirect.com/science/journal/01694332 | http://www.sciencedirect.com/science/journal/01694332, C-60 molecules were deposited on a submonolayer InSe film which was grown on a MoS2 substrate. In the previous experiment on the growth of a C-60 thin film on a GaSe/MoS2 heterostructure, C-60 grew only on exposed MoS2 regions and never nucleated on GaSe domains at substrate temperature above 180 degrees C. In the present case, however, C-60 molecules grow only on InSe domains and do not nucleate on the exposed MoS2 when the substrate temperature is higher than 80 degrees C. Using this method, C-60 domains whose dimension is smaller than 100 nm could be fabricated on each InSe domain. The selectivity of the C-60 growth is supposed to originate not from the surface morphology of those heterostructures, but from the difference in adsorption energy and surface diffusion energy of C-60 molecules on the surfaces of three different layered materials and a C-60 film. (C) 1998 Elsevier Science B.V. All rights reserved., text, application/pdf},
 pages = {670--675},
 title = {Fabrication of C-60 nanostructures by selective growth on GaSe/MoS2 and InSe/MoS2 heterostructure substrates},
 volume = {132},
 year = {1998},
 yomi = {ウエノ, ケイジ and コマ, アツシ}
}