{"created":"2023-05-15T15:25:32.782789+00:00","id":13223,"links":{},"metadata":{"_buckets":{"deposit":"690e01cd-50e0-4b41-a0d1-5ef4d65d2a97"},"_deposit":{"created_by":3,"id":"13223","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"13223"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00013223","sets":["94:426"]},"author_link":["21246","21245","18292","21247"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1998","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"675","bibliographicPageStart":"670","bibliographicVolumeNumber":"132","bibliographic_titles":[{"bibliographic_title":"APPLIED SURFACE SCIENCE"}]}]},"item_119_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-04-15","subitem_date_issued_type":"Created"}]},"item_119_description_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_description":"http://www.sciencedirect.com/science/journal/01694332 | http://www.sciencedirect.com/science/journal/01694332","subitem_description_type":"Other"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"C-60 molecules were deposited on a submonolayer InSe film which was grown on a MoS2 substrate. In the previous experiment on the growth of a C-60 thin film on a GaSe/MoS2 heterostructure, C-60 grew only on exposed MoS2 regions and never nucleated on GaSe domains at substrate temperature above 180 degrees C. In the present case, however, C-60 molecules grow only on InSe domains and do not nucleate on the exposed MoS2 when the substrate temperature is higher than 80 degrees C. Using this method, C-60 domains whose dimension is smaller than 100 nm could be fabricated on each InSe domain. The selectivity of the C-60 growth is supposed to originate not from the surface morphology of those heterostructures, but from the difference in adsorption energy and surface diffusion energy of C-60 molecules on the surfaces of three different layered materials and a C-60 film. (C) 1998 Elsevier Science B.V. All rights reserved.","subitem_description_type":"Abstract"}]},"item_119_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_119_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_119_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"Elsevier Science B.V."}]},"item_119_relation_16":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1016/S0169-4332(98)00136-6","subitem_relation_type_select":"DOI"}}]},"item_119_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"01694332","subitem_source_identifier_type":"ISSN"}]},"item_119_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[著者版]"}]},"item_119_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Ueno, Keiji"},{"subitem_text_value":"Sasaki, Kentaro"},{"subitem_text_value":"Nakahara, Tomonori"},{"subitem_text_value":"Koma, Atsushi"}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1002602"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"東京大学大学院理学系研究科(現 : 埼玉大学大学院理工学研究科物質科学部門)"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Department of Chemistry, The University of Tokyo"},{"subitem_text_value":"Department of Chemistry, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University)"},{"subitem_text_value":"Department of Chemistry, The University of Tokyo"},{"subitem_text_value":"Department of Chemistry, The University of Tokyo"}]},"item_119_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"1998-1"}]},"item_119_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"上野, 啓司"},{"creatorName":"ウエノ, ケイジ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Sasaki, Kentaro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakahara, Tomonori"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小間, 篤"},{"creatorName":"コマ, アツシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"A1002602.pdf","filesize":[{"value":"905.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A1002602.pdf","url":"https://sucra.repo.nii.ac.jp/record/13223/files/A1002602.pdf"},"version_id":"72cd229e-93eb-4ed1-8277-abef29c5d9cc"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"nanostructure fabrication","subitem_subject_scheme":"Other"},{"subitem_subject":"selective growth","subitem_subject_scheme":"Other"},{"subitem_subject":"layered material","subitem_subject_scheme":"Other"},{"subitem_subject":"InSe","subitem_subject_scheme":"Other"},{"subitem_subject":"C-60","subitem_subject_scheme":"Other"},{"subitem_subject":"atomic force microscope","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Fabrication of C-60 nanostructures by selective growth on GaSe/MoS2 and InSe/MoS2 heterostructure substrates","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Fabrication of C-60 nanostructures by selective growth on GaSe/MoS2 and InSe/MoS2 heterostructure substrates"}]},"item_type_id":"119","owner":"3","path":["426"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-04-15"},"publish_date":"2008-04-15","publish_status":"0","recid":"13223","relation_version_is_last":true,"title":["Fabrication of C-60 nanostructures by selective growth on GaSe/MoS2 and InSe/MoS2 heterostructure substrates"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T19:19:51.204327+00:00"}