@article{oai:sucra.repo.nii.ac.jp:00013224,
 author = {Hayashi, Toshiyuki and 上野, 啓司 and 斉木, 幸一朗 and 小間, 篤},
 issue = {1-2},
 journal = {JOURNAL OF CRYSTAL GROWTH},
 month = {},
 note = {http://www.sciencedirect.com/science/journal/00220248 | http://www.sciencedirect.com/science/journal/00220248, Sub-monolayer films of layered semiconductor InSe were grown on MoS2 substrates by molecular beam epitaxy, and the change in their growth features with Se/In flux ratio was investigated using scanning tunneling microscope in vacuum. It was found that InSe domains grown at 340 degrees C have a hexagonal shape when the Se/In ratio is about 17. Detailed images of the hexagonal InSe domains have revealed that adjacent sides of the hexagon have different structures; one is a straight edge and the other is a disordered edge. When the Se/In ratio was decreased, the disordered edges became predominant, the straight edges disappeared, and the InSe domain became triangular. On the contrary, when the Se/In ratio was increased, InSe domains became triangular ones consisting of only straight edges. The growth mechanism of InSe domains is discussed by considering the crystal structure of InSe and the reactivity of each side with incoming atoms. It is suggested that the balance of incorporation rate of In and Se atoms determines the structure of InSe domains. (C) 2000 Elsevier Science B.V. All rights reserved., text, application/pdf},
 pages = {115--122},
 title = {Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate},
 volume = {219},
 year = {2000},
 yomi = {ウエノ, ケイジ and サイキ, コウイチロウ and コマ, アツシ}
}