{"created":"2023-05-15T15:25:32.825087+00:00","id":13224,"links":{},"metadata":{"_buckets":{"deposit":"c9374b2e-c05f-43b1-82dc-332990708272"},"_deposit":{"created_by":3,"id":"13224","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"13224"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00013224","sets":["94:426"]},"author_link":["21250","21248","18292","21249"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1-2","bibliographicPageEnd":"122","bibliographicPageStart":"115","bibliographicVolumeNumber":"219","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF CRYSTAL GROWTH"}]}]},"item_119_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-04-15","subitem_date_issued_type":"Created"}]},"item_119_description_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_description":"http://www.sciencedirect.com/science/journal/00220248 | http://www.sciencedirect.com/science/journal/00220248","subitem_description_type":"Other"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Sub-monolayer films of layered semiconductor InSe were grown on MoS2 substrates by molecular beam epitaxy, and the change in their growth features with Se/In flux ratio was investigated using scanning tunneling microscope in vacuum. It was found that InSe domains grown at 340 degrees C have a hexagonal shape when the Se/In ratio is about 17. Detailed images of the hexagonal InSe domains have revealed that adjacent sides of the hexagon have different structures; one is a straight edge and the other is a disordered edge. When the Se/In ratio was decreased, the disordered edges became predominant, the straight edges disappeared, and the InSe domain became triangular. On the contrary, when the Se/In ratio was increased, InSe domains became triangular ones consisting of only straight edges. The growth mechanism of InSe domains is discussed by considering the crystal structure of InSe and the reactivity of each side with incoming atoms. It is suggested that the balance of incorporation rate of In and Se atoms determines the structure of InSe domains. (C) 2000 Elsevier Science B.V. All rights reserved.","subitem_description_type":"Abstract"}]},"item_119_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_119_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_119_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"Elsevier Science B.V."}]},"item_119_relation_16":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1016/S0022-0248(00)00627-8","subitem_relation_type_select":"DOI"}}]},"item_119_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00220248","subitem_source_identifier_type":"ISSN"}]},"item_119_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[著者版]"}]},"item_119_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Hayashi, Toshiyuki"},{"subitem_text_value":"Ueno, Keiji"},{"subitem_text_value":"Saiki, Koichiro"},{"subitem_text_value":"Koma, Atsushi"}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1002603"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"&EMPTY&"},{"subitem_text_value":"東京大学大学院理学系研究科(現 : 埼玉大学大学院理工学研究科物質科学部門)"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Department of Chemistry, The University of Tokyo"},{"subitem_text_value":"Department of Chemistry, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University)"},{"subitem_text_value":"Department of Complexity Science and Engineering, The University of Tokyo"},{"subitem_text_value":"Department of Chemistry, The University of Tokyo"}]},"item_119_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2000-10"}]},"item_119_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hayashi, Toshiyuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"上野, 啓司"},{"creatorName":"ウエノ, ケイジ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"斉木, 幸一朗"},{"creatorName":"サイキ, コウイチロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小間, 篤"},{"creatorName":"コマ, アツシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"A1002603.pdf","filesize":[{"value":"887.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A1002603.pdf","url":"https://sucra.repo.nii.ac.jp/record/13224/files/A1002603.pdf"},"version_id":"251d0d4b-0c74-41c1-a949-01be8678a401"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"STM","subitem_subject_scheme":"Other"},{"subitem_subject":"layered material","subitem_subject_scheme":"Other"},{"subitem_subject":"InSe","subitem_subject_scheme":"Other"},{"subitem_subject":"MoS2","subitem_subject_scheme":"Other"},{"subitem_subject":"growth kinetics","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate"}]},"item_type_id":"119","owner":"3","path":["426"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-04-15"},"publish_date":"2008-04-15","publish_status":"0","recid":"13224","relation_version_is_last":true,"title":["Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T19:19:50.817366+00:00"}