@article{oai:sucra.repo.nii.ac.jp:00013225,
 author = {上野, 啓司 and Tokuchi, S and 斉木, 幸一朗 and 小間, 篤},
 issue = {2},
 journal = {JOURNAL OF CRYSTAL GROWTH},
 month = {},
 note = {http://www.sciencedirect.com/science/journal/00220248 | http://www.sciencedirect.com/science/journal/00220248, We have fabricated a vacancy-ordered Ga2Se3 epitaxial film by molecular beam epitaxy on a vicinal Si(001) surface tilted toward the [110] direction by 4degrees. It was found by reflection high-energy electron diffraction observations that Ga2Se3 films grown around 470degreesC with Se/Ga flux ratios higher than 100 show excellent ordering of Ga vacancies, The vacancy ordering was not observed when the substrate temperature was higher than 490degreesC. In addition, polycrystalline film growth was dominant when the substrate temperature was lower than 450degreesC, and no vacancy ordering was observed when the Se/Ga ratio was 10. Only a poor crystallinity Ga2Se3 film was obtained on a nominal Si(001) substrate, which suggests that the single-domain 2 x I reconstruction on the vicinal Si(001) surface is essential to the growth of the vacancy-ordered Ga2Se3 film. (C) 2002 Elsevier Science B.V. All rights reserved., text, application/pdf},
 pages = {1610--1614},
 title = {Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate},
 volume = {237},
 year = {2002},
 yomi = {ウエノ, ケイジ and サイキ, コウイチロウ and コマ, アツシ}
}