{"created":"2023-05-15T15:25:32.868513+00:00","id":13225,"links":{},"metadata":{"_buckets":{"deposit":"3e7573c2-49a2-46da-bcc4-d528c6eb4663"},"_deposit":{"created_by":3,"id":"13225","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"13225"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00013225","sets":["94:426"]},"author_link":["21253","21251","18292","21252"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"1614","bibliographicPageStart":"1610","bibliographicVolumeNumber":"237","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF CRYSTAL GROWTH"}]}]},"item_119_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-04-15","subitem_date_issued_type":"Created"}]},"item_119_description_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_description":"http://www.sciencedirect.com/science/journal/00220248 | http://www.sciencedirect.com/science/journal/00220248","subitem_description_type":"Other"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have fabricated a vacancy-ordered Ga2Se3 epitaxial film by molecular beam epitaxy on a vicinal Si(001) surface tilted toward the [110] direction by 4degrees. It was found by reflection high-energy electron diffraction observations that Ga2Se3 films grown around 470degreesC with Se/Ga flux ratios higher than 100 show excellent ordering of Ga vacancies, The vacancy ordering was not observed when the substrate temperature was higher than 490degreesC. In addition, polycrystalline film growth was dominant when the substrate temperature was lower than 450degreesC, and no vacancy ordering was observed when the Se/Ga ratio was 10. Only a poor crystallinity Ga2Se3 film was obtained on a nominal Si(001) substrate, which suggests that the single-domain 2 x I reconstruction on the vicinal Si(001) surface is essential to the growth of the vacancy-ordered Ga2Se3 film. (C) 2002 Elsevier Science B.V. All rights reserved.","subitem_description_type":"Abstract"}]},"item_119_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_119_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_119_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"Elsevier Science B.V."}]},"item_119_relation_16":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1016/S0022-0248(01)02353-3","subitem_relation_type_select":"DOI"}}]},"item_119_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00220248","subitem_source_identifier_type":"ISSN"}]},"item_119_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[著者版]"}]},"item_119_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Ueno, Keiji"},{"subitem_text_value":"Tokuchi, S"},{"subitem_text_value":"Saiki, Koichiro"},{"subitem_text_value":"Koma, Atsushi"}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1002604"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"東京大学大学院理学系研究科(現 : 埼玉大学大学院理工学研究科物質科学部門)"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Department of Chemistry, Graduate School of Science, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University)"},{"subitem_text_value":"Department of Chemistry, Graduate School of Science, The University of Tokyo"},{"subitem_text_value":"Department of Complexity Science and Engineering, Graduate School of Frontier Sciences, The University of Tokyo"},{"subitem_text_value":"Department of Chemistry, Graduate School of Science, The University of Tokyo"}]},"item_119_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2002-4"}]},"item_119_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"上野, 啓司"},{"creatorName":"ウエノ, ケイジ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Tokuchi, S"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"斉木, 幸一朗"},{"creatorName":"サイキ, コウイチロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小間, 篤"},{"creatorName":"コマ, アツシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"A1002604.pdf","filesize":[{"value":"949.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A1002604.pdf","url":"https://sucra.repo.nii.ac.jp/record/13225/files/A1002604.pdf"},"version_id":"7ceca9e0-1795-4cac-a18d-c2b0dd1c74d3"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"reflection high energy electron diffraction","subitem_subject_scheme":"Other"},{"subitem_subject":"molecular beam epitaxy","subitem_subject_scheme":"Other"},{"subitem_subject":"gallium compounds","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconducting gallium compounds","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate"}]},"item_type_id":"119","owner":"3","path":["426"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-04-15"},"publish_date":"2008-04-15","publish_status":"0","recid":"13225","relation_version_is_last":true,"title":["Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T19:19:32.610461+00:00"}