@article{oai:sucra.repo.nii.ac.jp:00013229,
 author = {Sasaki, Kentaro and 上野, 啓司 and 小間, 篤},
 issue = {6B},
 journal = {JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS},
 month = {},
 note = {http://jjap.ipap.jp/link?JJAP/36/4061/ | http://jjap.ipap.jp/link?JJAP/36/4061/, A novel method of fabricating organic material nanostructures using selective growth on patterned layered material surfaces has been developed. First, an epitaxial monolayer film of layered semiconductor GaSe was gown on a cleaved face of MoS2. Then, nanosize patterns were drawn by scratching only the grown GaSe film using an atomic force microscope (AFM). Next, C-60 molecules were deposited on the surface. It has been found that if a substrate temperature is appropriately chosen, C-60 molecules nucleate only on the bare MoS2 surface and fill up the carved nanostructures. This combination of AFM lithography and selective growth enables the formation of C-60 nanostructures as small as 10 nm., text, application/pdf},
 pages = {4061--4064},
 title = {Nanostructure fabrication using selective growth on nanosize patterns drawn by a scanning probe microscope},
 volume = {36},
 year = {1997},
 yomi = {ウエノ, ケイジ and コマ, アツシ}
}