{"created":"2023-05-15T15:25:33.498781+00:00","id":13240,"links":{},"metadata":{"_buckets":{"deposit":"ae629293-038d-45cc-82fd-c793a23bcec9"},"_deposit":{"created_by":3,"id":"13240","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"13240"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00013240","sets":["94:426"]},"author_link":["18292","21311","21310"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3B","bibliographicPageEnd":"1891","bibliographicPageStart":"1888","bibliographicVolumeNumber":"40","bibliographic_titles":[{"bibliographic_title":"JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS"}]}]},"item_119_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-04-22","subitem_date_issued_type":"Created"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have developed a novel method to fabricate self-assembled quantum dots (QDs) of compound semiconductors on a Si(111) substrate using the so-called 'droplet epitaxy' technique. In order to fabricate QDs on a Si substrate by droplet epitaxy, we examined the termination of a Si (111) surface with a bilayer-GaSe. This surface is formed by depositing I monolayer Ga on a Si(111)-7x7 surface and annealing in a Se flux at 520 degreesC. Then Ga atoms are deposited to form Ga droplets on this surface, and the sample is annealed in an As flux to transform Ga droplets into GaAs QDs. It is revealed that GaAs QDs with a diameter as small as 10 nm and a height of 5 nm can be formed on the bilayer-GaSe/Si(111) substrate at a maximum density of 8.4 x 10(10) cm(-2). Using this method a new technique will be available to fabricate QDs of many kinds of compound semiconductors on the Si(111) substrate.","subitem_description_type":"Abstract"}]},"item_119_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_119_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_119_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"社団法人応用物理学会"}]},"item_119_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00214922","subitem_source_identifier_type":"ISSN"}]},"item_119_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[著者版]"}]},"item_119_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Ueno, Keiji"},{"subitem_text_value":"Saiki, Koichiro"},{"subitem_text_value":"Koma, Atsushi"}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1002624"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"東京大学大学院理学系研究科(現 : 埼玉大学大学院理工学研究科物質科学部門)"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Department of Chemistry, School of Science, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University)"}]},"item_119_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2001-3"}]},"item_119_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"上野, 啓司"},{"creatorName":"ウエノ, ケイジ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"斉木, 幸一朗"},{"creatorName":"サイキ, コウイチロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小間, 篤"},{"creatorName":"コマ, アツシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"A1002624.pdf","filesize":[{"value":"1.7 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A1002624.pdf","url":"https://sucra.repo.nii.ac.jp/record/13240/files/A1002624.pdf"},"version_id":"40f78173-0bfd-4841-acf1-d0965fcb01bb"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"quantum dot","subitem_subject_scheme":"Other"},{"subitem_subject":"droplet epitaxy","subitem_subject_scheme":"Other"},{"subitem_subject":"GaAs","subitem_subject_scheme":"Other"},{"subitem_subject":"GaSe","subitem_subject_scheme":"Other"},{"subitem_subject":"bilayer-GaSe","subitem_subject_scheme":"Other"},{"subitem_subject":"Si(111)","subitem_subject_scheme":"Other"},{"subitem_subject":"surface termination","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Fabrication of GaAs quantum dots on a bilayer-GaSe terminated Si(111) substrate","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Fabrication of GaAs quantum dots on a bilayer-GaSe terminated Si(111) substrate"}]},"item_type_id":"119","owner":"3","path":["426"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-04-22"},"publish_date":"2008-04-22","publish_status":"0","recid":"13240","relation_version_is_last":true,"title":["Fabrication of GaAs quantum dots on a bilayer-GaSe terminated Si(111) substrate"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T12:38:48.138841+00:00"}