{"created":"2023-05-15T15:25:34.964089+00:00","id":13275,"links":{},"metadata":{"_buckets":{"deposit":"5917452b-d7c2-4b06-ae26-8117b49f1af4"},"_deposit":{"created_by":3,"id":"13275","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"13275"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00013275","sets":["94:426"]},"author_link":["28828","28829","28830","21420","28831","28827","18434","16578","28832"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"2112","bibliographicPageStart":"2110","bibliographicVolumeNumber":"40","bibliographic_titles":[{"bibliographic_title":"PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES"}]}]},"item_119_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-06-04","subitem_date_issued_type":"Created"}]},"item_119_description_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_description":"http://www.sciencedirect.com/science/journal/13869477 | http://www.sciencedirect.com/science/journal/13869477","subitem_description_type":"Other"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We report on twin emission peaks observed from single isoelectronic traps formed by nitrogen pairs in nitrogen delta-doped GaAs by high-energy resolution micro-photoluminescence (PL) spectroscopy. The twin PL peaks show almost the same intensity with narrow linewidths of 20-50 mu eV, which are considerably smaller than that ever reported for isoelectronic traps in GaAs:N. The higher and lower energy luminescence transitions were linearly polarized in the [1 (1) over bar 0] and [1 1 0] directions, respectively, indicating that the two exciton states have completely orthogonal relations with each other. The fact that any pair of the twin PL peaks has the same polarization properties suggests that the splitting is due to the anisotropy between [1 (1) over bar 0] and [1 1 0] directions in the host crystal and is possibly explained by the strain anisotropy in the sample. (C) 2007 Elsevier B.V. All rights reserved.","subitem_description_type":"Abstract"}]},"item_119_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_119_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_119_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"ELSEVIER SCIENCE BV"}]},"item_119_relation_16":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1016/j.physe.2007.10.047","subitem_relation_type_select":"DOI"}}]},"item_119_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13869477","subitem_source_identifier_type":"ISSN"}]},"item_119_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[著者版]"}]},"item_119_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Endo, Y."},{"subitem_text_value":"Hijikata, Yasuto"},{"subitem_text_value":"Yaguchi, Hiroyuki"},{"subitem_text_value":"Yoshida, S."},{"subitem_text_value":"Yoshita, M."},{"subitem_text_value":"Akiyama, H."},{"subitem_text_value":"Nakajima, F."},{"subitem_text_value":"Katayama, R."},{"subitem_text_value":"Onabe, K."}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1002696"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"&EMPTY&"},{"subitem_text_value":"埼玉大学大学院理工学研究科数理電子情報部門"},{"subitem_text_value":"埼玉大学大学院理工学研究科数理電子情報部門"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Department of Electrical and Electronic Systems, Saitama University"},{"subitem_text_value":"Department of Electrical and Electronic Systems, Saitama University"},{"subitem_text_value":"Department of Electrical and Electronic Systems, Saitama University"},{"subitem_text_value":"Department of Electrical and Electronic Systems, Saitama University"},{"subitem_text_value":"Institute for Solid State Physics, The University of Tokyo"},{"subitem_text_value":"Institute for Solid State Physics, The University of Tokyo"},{"subitem_text_value":"Department of Advanced Materials Science, The University of Tokyo"},{"subitem_text_value":"Department of Advanced Materials Science, The University of Tokyo"},{"subitem_text_value":"Department of Advanced Materials Science, The University of Tokyo"}]},"item_119_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2008-4"}]},"item_119_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Endo, Y."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"土方, 泰斗"},{"creatorName":"ヒジカタ, ヤスト","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"矢口, 裕之"},{"creatorName":"ヤグチ, ヒロユキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Yoshida, S."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoshita, M."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Akiyama, H."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakajima, F."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Katayama, R."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Onabe, K."}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"A1002696.pdf","filesize":[{"value":"207.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A1002696.pdf","url":"https://sucra.repo.nii.ac.jp/record/13275/files/A1002696.pdf"},"version_id":"90f21ef1-e59d-47c4-b539-08c8ac962795"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"isoelectronic trap","subitem_subject_scheme":"Other"},{"subitem_subject":"single photon","subitem_subject_scheme":"Other"},{"subitem_subject":"delta-doping","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Twin photoluminescence peaks from single isoelectronic traps in nitrogen delta-doped GaAs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Twin photoluminescence peaks from single isoelectronic traps in nitrogen delta-doped GaAs"}]},"item_type_id":"119","owner":"3","path":["426"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-06-04"},"publish_date":"2008-06-04","publish_status":"0","recid":"13275","relation_version_is_last":true,"title":["Twin photoluminescence peaks from single isoelectronic traps in nitrogen delta-doped GaAs"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T19:17:47.663786+00:00"}