@article{oai:sucra.repo.nii.ac.jp:00013360,
 author = {Yamamoto, Takeshi and 土方, 泰斗 and 矢口, 裕之 and 吉田, 貞史},
 issue = {10},
 journal = {JAPANESE JOURNAL OF APPLIED PHYSICS},
 month = {},
 note = {http://jjap.ipap.jp/link?JJAP/47/7803/ | http://jjap.ipap.jp/link?JJAP/47/7803/, Thermal oxidation process of silicon carbide (SiC) has been studied by performing in-situ spectroscopic ellipsometry. In our previous work, we, for the first time, found that the growth rates of SiC(000 (1) over bar) C-face at oxidation thicknesses less than around 20 nm are much higher than those given by the Deal-Grove (D-G) model. In this report, we show that such a growth rate enhancement occurs also in the oxidation of SiC(0001) Si-face. By applying the empirical equation proposed by Massoud et al. [J. Electrochem. Soc. 132 (1985) 2685] to the oxidation of SiC Si-face and comparing the temperature and oxygen partial pressure dependences of oxidation rate parameters obtained with those for C-face, we discuss the difference in oxidation mechanism between SiC Si- and C-faces. [DOI: 10.1143/JJAP.47.7803], text, application/pdf},
 pages = {7803--7806},
 title = {Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime},
 volume = {47},
 year = {2008},
 yomi = {ヒジカタ, ヤスト and ヤグチ, ヒロユキ and ヨシダ, サダフミ}
}