{"created":"2023-05-15T15:25:38.570309+00:00","id":13360,"links":{},"metadata":{"_buckets":{"deposit":"bb5ad19a-8da5-485a-b2b9-d64b0c53cf86"},"_deposit":{"created_by":3,"id":"13360","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"13360"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00013360","sets":["94:426"]},"author_link":["18434","21659","21660","16578"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"10","bibliographicPageEnd":"7806","bibliographicPageStart":"7803","bibliographicVolumeNumber":"47","bibliographic_titles":[{"bibliographic_title":"JAPANESE JOURNAL OF APPLIED PHYSICS"}]}]},"item_119_description_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_description":"http://jjap.ipap.jp/link?JJAP/47/7803/ | http://jjap.ipap.jp/link?JJAP/47/7803/","subitem_description_type":"Other"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Thermal oxidation process of silicon carbide (SiC) has been studied by performing in-situ spectroscopic ellipsometry. In our previous work, we, for the first time, found that the growth rates of SiC(000 (1) over bar) C-face at oxidation thicknesses less than around 20 nm are much higher than those given by the Deal-Grove (D-G) model. In this report, we show that such a growth rate enhancement occurs also in the oxidation of SiC(0001) Si-face. By applying the empirical equation proposed by Massoud et al. [J. Electrochem. Soc. 132 (1985) 2685] to the oxidation of SiC Si-face and comparing the temperature and oxygen partial pressure dependences of oxidation rate parameters obtained with those for C-face, we discuss the difference in oxidation mechanism between SiC Si- and C-faces. [DOI: 10.1143/JJAP.47.7803]","subitem_description_type":"Abstract"}]},"item_119_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_119_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_119_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"応用物理学会"}]},"item_119_relation_16":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1143/JJAP.47.7803","subitem_relation_type_select":"DOI"}}]},"item_119_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00214922","subitem_source_identifier_type":"ISSN"}]},"item_119_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[著者版]"}]},"item_119_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Yamamoto, Takeshi"},{"subitem_text_value":"Hijikata, Yasuto"},{"subitem_text_value":"Yaguchi, Hiroyuki"},{"subitem_text_value":"Yoshida, Sadafumi"}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1002806"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"&EMPTY&"},{"subitem_text_value":"埼玉大学大学院理工学研究科数理電子情報部門"},{"subitem_text_value":"埼玉大学大学院理工学研究科数理電子情報部門"},{"subitem_text_value":"埼玉大学大学院理工学研究科数理電子情報部門"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"&EMPTY&"},{"subitem_text_value":"Division of Mathematics, Electronics and Informatics, Graduate School of Science and Engineering, Saitama University"},{"subitem_text_value":"Division of Mathematics, Electronics and Informatics, Graduate School of Science and Engineering, Saitama University"},{"subitem_text_value":"Division of Mathematics, Electronics and Informatics, Graduate School of Science and Engineering, Saitama University"}]},"item_119_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2008-10"}]},"item_119_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yamamoto, Takeshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"土方, 泰斗"},{"creatorName":"ヒジカタ, ヤスト","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"矢口, 裕之"},{"creatorName":"ヤグチ, ヒロユキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"吉田, 貞史"},{"creatorName":"ヨシダ, サダフミ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"A1002806.pdf","filesize":[{"value":"172.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A1002806.pdf","url":"https://sucra.repo.nii.ac.jp/record/13360/files/A1002806.pdf"},"version_id":"6d7e0ef5-ae01-4982-99f1-a31460f29968"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"silicon carbide (SiC)","subitem_subject_scheme":"Other"},{"subitem_subject":"(0001) Si-face","subitem_subject_scheme":"Other"},{"subitem_subject":"oxidation","subitem_subject_scheme":"Other"},{"subitem_subject":"in-situ spectroscopic ellipsometry","subitem_subject_scheme":"Other"},{"subitem_subject":"Deal-Grove model","subitem_subject_scheme":"Other"},{"subitem_subject":"Massoud empirical equation","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime"}]},"item_type_id":"119","owner":"3","path":["426"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-12-03"},"publish_date":"2008-12-03","publish_status":"0","recid":"13360","relation_version_is_last":true,"title":["Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T19:15:06.988514+00:00"}