@article{oai:sucra.repo.nii.ac.jp:00013400,
 author = {Takebayashi, Satoko and Abe, Shigeomi and Saiki, Koichiro and 上野, 啓司},
 issue = {8},
 journal = {APPLIED PHYSICS LETTERS},
 month = {},
 note = {http://link.aip.org/link/?APPLAB/94/083305/1 | http://link.aip.org/link/?APPLAB/94/083305/1, Pentacene field-effect transistors (FETs) were fabricated on a poly(vinyl alcohol) (PVA)-coated Ta2O5 gate dielectric using Au source/drain electrodes. Their device characteristics were examined before and after annealing the FETs in a vacuum. Before annealing, the pentacene FET showed an ambipolar operation with hole mobility of 0.1 cm(2) V-1 s(-1) and electron mobility of 0.005 cm(2) V-1 s(-1). After annealing at 50 degrees C, however, the p-type operation characteristics almost diminished and an enhanced n-type operation was observed. Na+ ions in the PVA are supposed to change the character of the injection barrier at the Au/pentacene junction and enable the n-type operation., text, application/pdf},
 pages = {083305--083305},
 title = {Origin of the ambipolar operation of a pentacene field-effect transistor fabricated on a poly(vinyl alcohol)-coated Ta2O5 gate dielectric with Au source/drain electrodes},
 volume = {94},
 year = {2009},
 yomi = {ウエノ, ケイジ}
}