{"created":"2023-05-15T15:25:40.262101+00:00","id":13400,"links":{},"metadata":{"_buckets":{"deposit":"9463efbb-3c4f-4156-bc47-f5802b6a6f86"},"_deposit":{"created_by":3,"id":"13400","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"13400"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00013400","sets":["94:426"]},"author_link":["21786","21785","21784","18292"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8","bibliographicPageEnd":"083305","bibliographicPageStart":"083305","bibliographicVolumeNumber":"94","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_119_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2009-05-11","subitem_date_issued_type":"Created"}]},"item_119_description_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_description":"http://link.aip.org/link/?APPLAB/94/083305/1 | http://link.aip.org/link/?APPLAB/94/083305/1","subitem_description_type":"Other"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Pentacene field-effect transistors (FETs) were fabricated on a poly(vinyl alcohol) (PVA)-coated Ta2O5 gate dielectric using Au source/drain electrodes. Their device characteristics were examined before and after annealing the FETs in a vacuum. Before annealing, the pentacene FET showed an ambipolar operation with hole mobility of 0.1 cm(2) V-1 s(-1) and electron mobility of 0.005 cm(2) V-1 s(-1). After annealing at 50 degrees C, however, the p-type operation characteristics almost diminished and an enhanced n-type operation was observed. Na+ ions in the PVA are supposed to change the character of the injection barrier at the Au/pentacene junction and enable the n-type operation.","subitem_description_type":"Abstract"}]},"item_119_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_119_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_119_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_119_relation_16":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1063/1.3089692","subitem_relation_type_select":"DOI"}}]},"item_119_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_119_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[出版社版]"}]},"item_119_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Takebayashi, Satoko"},{"subitem_text_value":"Abe, Shigeomi"},{"subitem_text_value":"Saiki, Koichiro"},{"subitem_text_value":"Ueno, Keiji"}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1002836"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"&EMPTY&"},{"subitem_text_value":"&EMPTY&"},{"subitem_text_value":"&EMPTY&"},{"subitem_text_value":"埼玉大学大学院理工学研究科物質科学部門"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"&EMPTY&"},{"subitem_text_value":"&EMPTY&"},{"subitem_text_value":"&EMPTY&"},{"subitem_text_value":"Graduate School of Science and Engineering, Saitama University"}]},"item_119_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2009-2"}]},"item_119_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Takebayashi, Satoko"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Abe, Shigeomi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Saiki, Koichiro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"上野, 啓司"},{"creatorName":"ウエノ, ケイジ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"A1002836.pdf","filesize":[{"value":"224.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A1002836.pdf","url":"https://sucra.repo.nii.ac.jp/record/13400/files/A1002836.pdf"},"version_id":"0551ac04-8b66-43d8-9399-5f06a1286098"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"annealing","subitem_subject_scheme":"Other"},{"subitem_subject":"electrodes","subitem_subject_scheme":"Other"},{"subitem_subject":"electron mobility","subitem_subject_scheme":"Other"},{"subitem_subject":"field effect transistors","subitem_subject_scheme":"Other"},{"subitem_subject":"gold","subitem_subject_scheme":"Other"},{"subitem_subject":"hole mobility","subitem_subject_scheme":"Other"},{"subitem_subject":"organic semiconductors","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor-metal boundaries","subitem_subject_scheme":"Other"},{"subitem_subject":"tantalum compounds","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Origin of the ambipolar operation of a pentacene field-effect transistor fabricated on a poly(vinyl alcohol)-coated Ta2O5 gate dielectric with Au source/drain electrodes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Origin of the ambipolar operation of a pentacene field-effect transistor fabricated on a poly(vinyl alcohol)-coated Ta2O5 gate dielectric with Au source/drain electrodes"}]},"item_type_id":"119","owner":"3","path":["426"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-05-11"},"publish_date":"2009-05-11","publish_status":"0","recid":"13400","relation_version_is_last":true,"title":["Origin of the ambipolar operation of a pentacene field-effect transistor fabricated on a poly(vinyl alcohol)-coated Ta2O5 gate dielectric with Au source/drain electrodes"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T09:25:20.633452+00:00"}