{"created":"2023-05-15T15:25:42.995118+00:00","id":13464,"links":{},"metadata":{"_buckets":{"deposit":"903081e0-03c0-4b85-ab34-5c31bb642700"},"_deposit":{"created_by":3,"id":"13464","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"13464"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00013464","sets":["94:426"]},"author_link":["22346","22347","18278","22348"],"item_119_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"82","bibliographicPageStart":"79","bibliographicVolumeNumber":"32","bibliographic_titles":[{"bibliographic_title":"Journal of light and visual environment"}]}]},"item_119_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2009-09-02","subitem_date_issued_type":"Created"}]},"item_119_description_19":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We demonstrated AlGaN multi-quantum well (MQW) deep ultraviolet (UV) light-emitting diodes (LEDs) with wavelength in the range of 227-261 nm fabricated on high-quality AlN buffers on sapphire substrates. We achieved crack-free, thick AlN buffer on sapphire with low threading dislocation density (TDD) and atomically flat surface by introducing an ammonia (NH_3) pulse-flow multi-layer (ML) growth method through metal-organic chemical vapor deposition (MOCVD). The edge- and screw-type dislocation densities of AlGaN layer on AlN buffer were reduced to 7.5×10^8 and 3.8×10^7 cm^<-2>, respectively, by using a ML-AlN buffer. We achieved single-peaked high-brightness operations of AlGaN deep-UV LEDs by fabricating them on the ML-AlN buffers on sapphire substrates. The maximum output power and external quantum efficiency (EQE) of the 261 nm and 227.5 nm LEDs were 1.65 mW and 0.23% under room-temperature (RT) CW operation, and 0.15 mW and 0.2%, under RT pulsed operation, respectively.","subitem_description_type":"Abstract"}]},"item_119_description_21":{"attribute_name":"注記","attribute_value_mlt":[{"subitem_description":"rights: 社団法人照明学会\nrights: 本文データは学協会の許諾に基づきCiNiiから複製したものである\nrelation: IsVersionOf: http://ci.nii.ac.jp/naid/110006663889/","subitem_description_type":"Other"}]},"item_119_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_119_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_119_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"社団法人照明学会"}]},"item_119_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"03878805","subitem_source_identifier_type":"ISSN"}]},"item_119_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[出版社版]"}]},"item_119_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"HIRAYAMA, Hideki"},{"subitem_text_value":"YATABE, Tohru"},{"subitem_text_value":"NOGUCHI, Norimichi"},{"subitem_text_value":"KAMATA, Norihiko"}]},"item_119_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"A1003142"}]},"item_119_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"理研"},{"subitem_text_value":"埼玉大学"},{"subitem_text_value":"埼玉大学"},{"subitem_text_value":"埼玉大学"}]},"item_119_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"RIKEN:JST CREST"},{"subitem_text_value":"Saitama University"},{"subitem_text_value":"Saitama University"},{"subitem_text_value":"Saitama University:JST CREST"}]},"item_119_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2008-5"}]},"item_119_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"平山, 秀樹"},{"creatorName":"ヒラヤマ, ヒデキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"谷田部, 透"},{"creatorName":"ヤタベ, トオル","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"野口, 憲道"},{"creatorName":"ノグチ, ノリミチ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"鎌田, 憲彦"},{"creatorName":"カマタ, ノリヒコ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"A1003142.pdf","filesize":[{"value":"718.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"A1003142.pdf","url":"https://sucra.repo.nii.ac.jp/record/13464/files/A1003142.pdf"},"version_id":"ffc24c72-1d72-4fbb-97ad-6af58af7603c"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire"}]},"item_type_id":"119","owner":"3","path":["426"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-09-02"},"publish_date":"2009-09-02","publish_status":"0","recid":"13464","relation_version_is_last":true,"title":["227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T12:35:23.915120+00:00"}