@article{oai:sucra.repo.nii.ac.jp:00013784,
 author = {小林, 諒平 and 福田, 武司 and SUZUKI, Yuu and 幡野, 健 and 鎌田, 憲彦 and AIHARA, Satoshi and 瀬尾, 北斗 and 照沼, 大陽},
 journal = {Molecular Crystals and Liquid Crystals},
 month = {},
 note = {By doping 1,1-dimethyl-2,5-bis(N,N-dimethylaminophenyl)-3,4-diphenylsilole (silole-A) in poly(9,9- dioctylfluorene-alt-benzothiadiazole) (F8BT), an improved photoconductive characteristics was observed for a single layer organic device fabricated by a spin-coating process. A maximum external quantum efficiency (EQE) was 8.9 % at -20 MV/m when the ratio of silole-A:F8BT was 75 mol%. The EQE of the reference device with F8BT only was 0.06 %, and the highest EQE was approximately 160 times higher than that of the reference device. In addition, the photoluminescence (PL) quantum efficiency of the silole- A:F8BT neat film was lower than those of silole-A and F8BT neat films. The lower PL quantum efficiency indicates that the photo-induced carriers efficiently dislocate in the organic layer, resulting in the high EQE of organic photoconductive device., This is a preprint of an Article submitted for consideration in Mol. Cryst. Liq. Cryst., © 2010 Copyright: Taylor & Francis; Mol. Cryst. Liq. Lryst., is available online at: http://www.informaworld.com/smpp/title~content=t713644168, text, application/pdf},
 title = {Improved Photoconductive Characteristics of Solution-Processed Organic Device by Doping Silole Derivative},
 year = {2010},
 yomi = {コバヤシ, リョウヘイ and フクダ, タケシ and スズキ, ユウ and ハタノ, ケン and カマタ, ノリヒコ and アイハラ, サトシ and セオ, ホクト and テルヌマ, ダイヨウ}
}